Publication

Crystal Phase Tuning in Planar Films of III-V Semiconductors

Anna Fontcuberta i Morral, Kirsten Emilie Moselund, Nicolas Tappy
2019
Conference Papers

Abstract

We report on the control of the crystal phase of micron-sized planar III-V semiconductor films grown on top of standard (001) oriented substrates. We achieve this by confining the MOCVD process using SiO2 templates and selecting specific growth planes. We further characterize InP films using STEM, PL and CL and find phase purities of 100% and 97% for zinc-blende (ZB) and wurtzite (WZ), respectively.

Official source

https://infoscience.epfl.ch/entities/publication/48961215-c0ef-4cbc-b21d-63f5606003cb

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Anna Fontcuberta i Morral, Kirsten Emilie Moselund, Nicolas Tappy
2019
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/48961215-c0ef-4cbc-b21d-63f5606003cb

About this result

Related concepts (25)

Semiconductor device fabrication

Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM) that are present in everyday electrical and electronic devices. It is a multiple-step photolithographic and physio-chemical process (with steps such as thermal oxidation, thin-film deposition, ion-implantation, etching) during which electronic circuits are gradually created on a wafer, typically made of pure single-crystal semiconducting material.

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

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