Publications related to RF Performance of InAlN/GaN HFETs and MOSHFETs With f(T) X L-G up to 21 GHz . mu m

Related publications (11)

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Riyaz Mohammed Abdul Khadar, Minghua Zhu

GaN-on-Si high-electron-mobility transistors (HEMTs) exhibit excellent properties for efficient power conversion. Nevertheless, a considerable energy loss associated with the charging and discharging of the output capacitance (COSS) in these transistors se ...

Institute of Electrical and Electronics Engineers2021

Non-linear transfer function identification of pressure probes using Siren Disks

Jürg Alexander Schiffmann, Karim Magdi Zakaria Abdelrahman Shalash

This article presents a Siren Disk proof of concept for the dynamic excitation of pressure probes, and a method to reconstruct distorted signals due to pneumatic channels. Constraints in sensor installation require placing a pressure transducer distant fro ...

2018

Acoustic emission source detection and wave generation on a working plate using piezoelectric actuators

Xinchang Liu

In modern automated assembly lines, part feeders play an important role to separate and sort parts. Agility and flexibility are required to achieve a good yield for different types of parts. The common working principle is to vibrate a working plate driven ...

EPFL2017

Sensorless Electroacoustic Absorbers Through Synthesized Impedance Control for Damping Low-Frequency Modes in Cavities

Hervé Lissek, Romain Boulandet, Etienne Thierry Jean-Luc Rivet

This paper presents a concept of sensorless electroacoustic absorber for damping the low-frequency modes in a cavity such as a duct or a room. Taking advantage of the reciprocity of the voice coil transducer, it is shown that a synthetic electrical admitta ...

S Hirzel Verlag2016

Encapsulated Low Frequency Vibrating Body Field Effect Resonator

Marion Hermersdorf

Resonators for time and frequency reference applications are essential elements found in most electronic devices surrounding us. The continuous minimization and ubiquitous distribution of such electronic devices and circuits demands for resonators of small ...

EPFL2013

Fully Passivated AlInN/GaN HEMTs With f(T)/f(MAX) of 205/220 GHz

Nicolas Grandjean, Jean-François Carlin

We report the fabrication and characterization of 30-nm-gate fully passivated AlInN/GaN high-electron mobility transistors (HEMTs) with cutoff frequencies f(T) and f(MAX) simultaneously exceeding 200 GHz at a given bias point. The current gain cutoff frequ ...

Institute of Electrical and Electronics Engineers2011

Investigations on a 1kVA Reactive Power Compensated Current Converter using monolithic RB-IGBT modules

Alfred Rufer, Daniel Siemaszko

This work presents a current converter topology with an added free-wheeling path on the output load. This converter allows the compensation of the reactive power consumption by forcing the input current fundamental component to be in phase with the input v ...

2009

A Widely-Tunable and Ultra-Low-Power MOSFET-C Filter Operating in Subthreshold

Yusuf Leblebici, Seyed Armin Tajalli

A very wide tuning range ultra-low-power MOSFET-C filter is presented. The wide tuning range in this filter has been achieved without using any switchable components or programmable building blocks, and the cutoff frequency of the filter can be adjusted si ...

IEEE2009

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

AllnN/GaN high electron mobility transistors (HEMTs) on sapphire substrate have yielded a maximum drain current density of 1.26 A/mm with a current gain cutoff and maximum oscillation frequencies about 26 and 40 GHz, respectively, for a 0.25 mu m gate leng ...

2007

Copper / low-k technological platform for the fabrication of high quality factor above-IC passive devices

Modern communication devices demand challenging specifications in terms of miniaturization, performance, power consumption and cost. Every new generation of radio frequency integrated circuits (RF-ICs) offer better functionality at reduced size, power cons ...

EPFL2007