Reliable Gate Driving of SiC MOSFETs With Crosstalk Voltage Elimination and Two-Step Short-Circuit Protection

Drazen Dujic, Chengmin Li
2022
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Drazen Dujic, Chengmin Li
2022
Journal Articles

Official source

Related publications (7)

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Related publications (7)

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Reza Soleiman Zadeh Ardebili, Riyaz Mohammed Abdul Khadar, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain

Elison de Nazareth Matioli, Jun Ma, Minghua Zhu

In this letter, we present high-performance GaN-on-Si metal-oxide-semiconductor high electron mobility transistors with record reverse-blocking (RB) capability. By replacing the conventional ohmic drain with a hybrid tri-anode Schottky drain, a high revers ...

Institute of Electrical and Electronics Engineers2017

Operation regimes and electrical transport of steep slope Schottky Si-FinFETS

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang

In the quest for energy efficient circuits, considerable focus has been given to steep slope and polarity-controllable devices, targeting low supply voltages and reduction of transistor count. The recently proposed concept of the three-independent gated Si ...

2017