Publications related to Gold-Free GaAs Nanowire Synthesis and Optical Properties

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

EPFL2024

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Pierre Christophe Lottigier

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

EPFL2024

Plasmonic Nanostructures for Photocatalysis: Material, Photonic and Electronic Effects

Fateme Kiani Shahvandi

Plasmonic photochemistry has a large potential to replace energy-intensive chemical processes with low-temperature, low-pressure light-driven chemical reactions. Plasmonic nanostructures have emerged as promising photocatalysts with exceptional and tunable ...

EPFL2024

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Didem Dede

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots

Johann Nicolaï Stachurski

Over the past decade, quantum photonics platforms aiming at harnessing the fundamental properties of single particles, such as quantum superposition and quantum entanglement, have flourished. In this context, single-photon emitters capable of operating at ...

EPFL2024

Long live(d) CsPbBr3 superlattices: colloidal atomic layer deposition for structural stability

Raffaella Buonsanti, Alexander Nicolas Chen, Philippe Benjamin Green, Victoria Lapointe

Superlattice formation afforded by metal halide perovskite nanocrystals has been a phenomenon of interest due to the high structural order induced in these self-assemblies, an order that is influenced by the surface chemistry and particle morphology of the ...

Royal Soc Chemistry2024

Hybrid organic/metal-oxide shells on semiconductor nanocrystals via colloidal atomic layer deposition

Ona Segura Lecina

The escalating energy demand and the imperative necessity to reduce the carbon footprint require transformative approaches to energy conversion. Materials chemistry plays a pivotal role in addressing these global challenges by developing novel materials fo ...

EPFL2024

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Stencil-Based Selective Surface Functionalization of Silicon Nanowires in 3D Device Architectures for Next-Generation Biochemical Sensors

Yusuf Leblebici, Ece Öztürk, Mohammad Nasr Esfahani

Surface functionalization of 1D materials such as silicon nanowires is a critical preparation technology for biochemical sensing. However, existing nonselective functionalization techniques result in nonlocal binding and contamination, with potential devic ...

Amer Chemical Soc2024

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

Plasmonically enhanced molecular junctions for investigation of atomic-scale fluctuations in self-assembled monolayers

Sakthi Priya Amirtharaj

Molecular junctions represent a fascinating frontier in the realm of nanotechnology and are one of the smallest optoelectronic devices possible, consisting of individual molecules or a group of molecules that serve as the active element sandwiched between ...

EPFL2024

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Ezgi Genç

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

EPFL2024

Parametric Wavelength Conversion in Waveguiding Structures: Efficiency, Bandwidth and Polarization

Arman Ayan

Photonics integrated circuits are a promising solution for the growing demands of data transmission and future system-on-chip technologies. Within this context, nonlinear optical interactions offer unique opportunities for all-optical processing, sampling, ...

EPFL2024

Semiconductor-based device architectures in multimaterial fibers

William Nicolas Duncan Esposito

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

EPFL2023

Scalable Approaches to III-V Nanowires for Photodetection

Nicholas Paul Morgan

III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

EPFL2023

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Thomas Fjord Kjaersgaard Weatherley

Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...

EPFL2023

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Alok Rudra, Anna Fontcuberta i Morral, Nicholas Paul Morgan, Marie Sophie Sanglé-Ferrière, Didem Dede, Valerio Piazza, Ann-Kristin Stief, Vladimir Dubrovskii

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. ...

AMER CHEMICAL SOC2023

Surface Chemistry Dictates the Enhancement of Luminescence and Stability of InP QDs upon c-ALD ZnO Hybrid Shell Growth

Raffaella Buonsanti, Anna Loiudice, Dragos-Constantin Stoian, Petru Pasquale Albertini, Ona Segura Lecina, Philippe Benjamin Green, Mark Adrian Newton, Jari Leemans

Indium phosphide quantum dots (InP QDs) are a promising example of Restriction of Hazardous Substances directive (RoHS)-compliant light-emitting materials. However, they suffer from low quantum yield and instability upon processing under ambient conditions ...

Amer Chemical Soc2023

Transport and Interfacial Injection of d-Band Hot Holes Control Plasmonic Chemistry

Giulia Tagliabue, Fateme Kiani Shahvandi, Omer Can Karaman, Milad Sabzehparvar, Alan Richard Bowman

Harnessing nonequilibrium hot carriers from plasmonic metal nanostructures constitutes a vibrant research field with the potential to control photochemical reactions, particularly for solar fuel generation. However, a comprehensive understanding of the int ...

AMER CHEMICAL SOC2023

Zn3P2 as an earth-abundant photovoltaic material: from growth to device

Rajrupa Paul

The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...

EPFL2023