Publication

Efficient, narrow linewidth excitonic emission at room temperature from GaAs/AlGaAs V-groove quantum wire light-emitting diodes

Elyahou Kapon, Alok Rudra, Marc-André Dupertuis, Helge Weman
2001
Journal Articles

Abstract

We report on efficient, narrow linewidth exciton recombination in GaAs/AlGaAs V-groove quantum wire light-emitting diodes at room temperature. The high efficiency is due to a selective carrier injection mechanism resulting in an estimated internal quantum efficiency of similar to 20% with an electroluminescence (EL) linewidth as narrow as 15 meV. The thermal broadening contribution to the linewidth is 6 meV due to exciton scattering with optical phonons. An analysis of the EL peak shift in a magnetic field points out the typical superlinear behavior of the excitonic binding energy for a quantum wire. (C) 2001 American Institute of Physics.

Official source

https://infoscience.epfl.ch/entities/publication/46c52da4-583f-48bb-8880-a3f352296db3

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Elyahou Kapon, Alok Rudra, Marc-André Dupertuis, Helge Weman
2001
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/46c52da4-583f-48bb-8880-a3f352296db3

About this result

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Efficient, narrow linewidth excitonic emission at room temperature from GaAs/AlGaAs V-groove quantum wire light-emitting diodes

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