Publications related to Reduced model for capillary breakup with thermal gradients: Predictions and computational validation

Related publications (12)

Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance

Nicolas Würsch, Jonathan Emanuel Thomet, Sylvain Dunand

This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked i ...

2024

22.8% full-area bifacial n-PERT solar cells with rear side sputtered poly-Si (n) passivating contact

Christophe Ballif, Sylvain Nicolay, Andrea Ingenito, Bertrand Yves Paul Paviet-Salomon, Sofia Libraro

High-temperature compatible passivating contacts based on phosphorus doped polysilicon (poly-Si(n)) on a thin silicon oxide, employed on the rear side of bifacial n-PERT like solar cells provide an efficiency increase while being compatible with current ph ...

ELSEVIER2023

Diffusion in dense supercritical methane from quasi-elastic neutron scattering measurements

Richard Gaal

Methane, the principal component of natural gas, is an important energy source and raw material for chemical reactions. It also plays a significant role in planetary physics, being one of the major constituents of giant planets. Here, we report measurement ...

Nature Research2021

Effect of a halogen-based precursor on dopant incorporation in 3C-SiC film epitaxy

Marco Negri

Silicon carbide thin films were synthesised by vapour phase epitaxy technique on silicon substrates using silane and propane as precursors. Methyltrichlorosilane (MTS) was added, and nitrogen was used as dopant precursor. Samples with different doping conc ...

Springer2017

Direct measurement of ambipolar diffusion in bulk silicon by ultrafast infrared imaging of laser-induced microplasmas

Alexandros Mouskeftaras

Carrier kinetics in the density range of N = 10(17) - 10(20) cm(-3) is investigated inside the bulk of crystalline silicon. Most conventional experimental techniques used to study carrier mobility are indirect and lack sensitivity because of charging effec ...

Amer Inst Physics2016

Design of periodic nano- and macro-scale textures for high-performance thin-film multi-junction solar cells

Christophe Ballif, Franz-Josef Haug, Etienne Antoine Julien Moulin

Surface textures in thin-film silicon multi-junction solar cells play an important role in gaining the photocurrent of the devices. In this paper, a design of the textures is carried out for the case of amorphous silicon/micro-crystalline silicon (a-Si:H/m ...

Iop Publishing Ltd2016

Advanced Architectures and Processing for High-Efficiency Silicon Heterojunction Solar Cells

Jonas Geissbühler

Crystalline silicon solar cells currently represent the largest part of the photovoltaic market. In response to the demand for higher efficiency devices, silicon heterojunction technology, which merges a crystalline silicon wafer with thin amorphous silico ...

EPFL2015

Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells

Aïcha Hessler-Wyser, Stefaan De Wolf, Bénédicte Demaurex

Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recom ...

American Institute of Physics2014

Light trapping in solar cells: can periodic beat random?

Christophe Ballif, Franz-Josef Haug, Matthieu Despeisse, Mathieu Gérard Boccard, Marco Cantoni, Duncan Thomas Lindsay Alexander, Corsin Battaglia, Jordi Escarre Palou, Karin Söderström

Theory predicts that periodic photonic nanostructures should outperform their random counterparts in trapping light in solar cells. However, the current certified world-record conversion efficiency for amorphous silicon thin-film solar cells, which strongl ...

2012

Time evolution of surface defect states in hydrogenated amorphous silicon studied by photothermal and photocurrent spectroscopy and optical simulation

Christophe Ballif, Matthieu Despeisse, Michael Elias Stückelberger, Jakub Holovsky

The time evolution of surface defect density and width of space charge region in thin layer of amorphous silicon is observed experimentally by Fourier transform photocurrent spectroscopy. This work reviews the assumption that photocurrent is insensitive to ...

Elsevier Science Bv2012

Ultra-high quality surface passivation of crystalline silicon wafers in large area parallel plate reactor at 40 MHz

Christophe Ballif, Luc Fesquet

We use a new in-house, large area and automated deposition system: the usable deposition area is 410 × 520 mm with RF-frequency of 40 MHz. We deposit intrinsic a-Si:H layer on flat p-type or n-type c-Si wafers after performing an HF dip. The overall recomb ...

2009

First-principles study of defects at the SiC/SiO2 interface through hybrid functionals

Fabien Devynck

The requirements of present high-performance power electronic systems are exceeding the power density, efficiency, and reliability of silicon-based devices. Silicon carbide (SiC) is a candidate of choice for high-temperature, high-speed, high-frequency, an ...

EPFL2008