Publication

Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

Matthieu Berthomé
2012
Journal Articles

Abstract

In this letter, we report the performance of high-kappa/metal gate nanowire (NW) transistors without junctions fabricated with a channel thickness of 9 nm and sub-15-nm gate length and NW width. Near-ideal subthreshold slope (SS) and extremely low leakage currents are demonstrated for ultrascaled gate lengths with a high on-off ratio (I-on/I-off) > 10(6). For the first time, an SS lower than 70 mV/dec is achieved at L-G = 13 nm for n-type and p-type transistors, highlighting excellent electrostatic integrity of trigate junctionless NW MOSFETs.

Official source

https://infoscience.epfl.ch/entities/publication/4526b772-24fb-4e50-90ec-677eb2a358d5

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Matthieu Berthomé
2012
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/4526b772-24fb-4e50-90ec-677eb2a358d5

About this result

Related concepts (29)

Transistor count

The transistor count is the number of transistors in an electronic device (typically on a single substrate or "chip"). It is the most common measure of integrated circuit complexity (although the majority of transistors in modern microprocessors are contained in the cache memories, which consist mostly of the same memory cell circuits replicated many times). The rate at which MOS transistor counts have increased generally follows Moore's law, which observed that the transistor count doubles approximately every two years.

Transistor

A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

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