Publication

Magnetic Skyrmions: From Fundamental Physics to Topological Electronics

2020
Reviews

Abstract

In Switzerland the National Science Foundation recently funded a network on Nano-Skyrmionics [https://skyrmions.epfl.ch] joining scientists from various institutions. Here, we provide a status report on selected forefront aspects of the research field. This includes identifying fundamentally new topological magnetization configurations, the process-es of skyrmion nucleation, manipulation, annihilation and detection with a view to their application as parts of memory devices, and their potential integration in broad-band spin dynamic and logic devices.

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2020
Reviews

Abstract

Official source

Related concepts (32)

Skyrmion

In particle theory, the skyrmion (ˈskɜrmi.ɒn) is a topologically stable field configuration of a certain class of non-linear sigma models. It was originally proposed as a model of the nucleon by (and named after) Tony Skyrme in 1961. As a topological soliton in the pion field, it has the remarkable property of being able to model, with reasonable accuracy, multiple low-energy properties of the nucleon, simply by fixing the nucleon radius. It has since found application in solid-state physics, as well as having ties to certain areas of string theory.

Computer memory

Computer memory stores information, such as data and programs for immediate use in the computer. The term memory is often synonymous with the term primary storage or main memory. An archaic synonym for memory is store. Computer memory operates at a high speed compared to storage which is slower but less expensive and higher in capacity. Besides storing opened programs, computer memory serves as disk cache and write buffer to improve both reading and writing performance.

Flash memory

Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating gate MOSFETs. They differ at the circuit level depending on whether the state of the bit line or word lines is pulled high or low: in NAND flash, the relationship between the bit line and the word lines resembles a NAND gate; in NOR flash, it resembles a NOR gate.

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