Publication

The heterojunction parameters from a microscopic point of view

Giorgio Margaritondo
1983
Conference Papers

Abstract

The use of surface-sensitive experimental techniques has produced in recent years important advances in the understanding of the microscopic nature of heterojunction parameters. In particular, valence band discontinuity has been measured for a large number of interfaces by photoemission spectroscopy and the results identify the LCAO approach by Harrison (1977) as the best first-order calculation of this parameter. Local effects, however, limit the accuracy of the estimate to 0.2-0.3 eV. Some evidence has been obtained to show that surface defects play an important role in the interface Fermi-level pinning for heterojunctions involving III-V compounds, and therefore in the establishment of the built-in potential

Official source

https://infoscience.epfl.ch/entities/publication/42412ab4-6271-4e10-a011-b1246b01b43b

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Giorgio Margaritondo
1983
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/42412ab4-6271-4e10-a011-b1246b01b43b

About this result

Related concepts (32)

Fermi level

The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. It is a thermodynamic quantity usually denoted by μ or EF for brevity. The Fermi level does not include the work required to remove the electron from wherever it came from. A precise understanding of the Fermi level—how it relates to electronic band structure in determining electronic properties; how it relates to the voltage and flow of charge in an electronic circuit—is essential to an understanding of solid-state physics.

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In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.

Band bending

In solid-state physics, band bending refers to the process in which the electronic band structure in a material curves up or down near a junction or interface. It does not involve any physical (spatial) bending. When the electrochemical potential of the free charge carriers around an interface of a semiconductor is dissimilar, charge carriers are transferred between the two materials until an equilibrium state is reached whereby the potential difference vanishes.

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The heterojunction parameters from a microscopic point of view

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