Single-chip electron spin resonance detectors operating at 50 GHz, 92 GHz, and 146 GHz

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The design point that had been chosen for EU DEMO in 2016 is reviewed here and a modification is proposed with a lower aspect ratio. Previously the same aspect ratio, A, was chosen for EU DEMO as in major tokamak experiments including ITER (A = 3.1), and, ...

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Single-chip electron spin resonance detectors operating at 50 GHz, 92 GHz, and 146 GHz

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Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Active Power Decoupling for Single-Phase Input-Series-Output-Parallel Solid-State Transformers

3D Printing of Customizable Transient Bioelectronics and Sensors

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Phase Shift Angle Segmentation Modulation for Soft-Switching Medium-Voltage DAB Converter With Series-Connected SiC MOSFETs

Modeling and optimization of PCB coils for inductive power transfer systems

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Non-contact sensing for anomaly detection in wind turbine blades: A focus-SVDD with complex-valued auto-encoder approach

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Static and Dynamic Voltage Balancing for an IGCT-Based Resonant DC Transformer

Anomalous‐Chern Steering of Topological Nonreciprocal Guided Waves

Experimental observation of topological transition in linear and nonlinear parametric oscillators

Magnetism of Single Surface Adsorbed Atoms Studied with Radio-Frequency STM

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Inversing the actuation cycle of dielectric elastomer actuators for a facial prosthesis

Re-design of EU DEMO with a low aspect ratio

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

500 MHz high resolution proximity sensors with fully integrated digital counter

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron