Publications related to Single-chip electron spin resonance detectors operating at 50 GHz, 92 GHz, and 146 GHz

Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify the room temperature metallic phase of a perovskite nickelate NdNiO3 into an ...

Nature Portfolio2024

Magnetism of Single Surface Adsorbed Atoms Studied with Radio-Frequency STM

Clément Marie Soulard

This thesis investigates the magnetic properties of single atoms and molecules adsorbed on thin magnesium oxide decoupling layers, grown on a silver single crystal. To address these systems experimentally, we use a low temperature scanning tunneling micros ...

EPFL2024

3D Printing of Customizable Transient Bioelectronics and Sensors

Danick Briand, Nicolas Francis Fumeaux

Transient electronics have emerged as a new category of devices that can degrade after their functional lifetime, offering tremendous potential as disposable sensors, actuators, wearables, and implants. Additive manufacturing methods represent a promising ...

2024

Active Power Decoupling for Single-Phase Input-Series-Output-Parallel Solid-State Transformers

Drazen Dujic, Tianyu Wei, Andrea Cervone

Solid-state transformers with input-series outputparallel structures are being considered for a variety of applications requiring MVAC to LVDC conversion. Due to the singlephase AC/DC conversion at the input side, all floating cells of the solid-state tran ...

2024

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

A 0.14-nJ/b 200-Mb/s 2.7-3.5-GHz Quasi-Balanced FSK Transceiver With PLL-Based Modulation and Sideband Energy Detection

Cong Ding, Bowen Wang

This paper describes a balanced frequency shift keying (FSK) modulation, namely quasi-balanced FSK (QB-FSK), for energy-efficient high-data-rate communication. Not suffering from data-pattern dependency, the proposed modulation method enables frequency mod ...

2024

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Phase Shift Angle Segmentation Modulation for Soft-Switching Medium-Voltage DAB Converter With Series-Connected SiC MOSFETs

Heng Fang, Rui Lu, Chengmin Li

The medium-voltage (MV) dual active bridge (DAB) converter with series-connected SiC (S-SiC) MOSFETs is a promising solution for high-power-density isolated dc/dc converter. To improve the voltage sharing and reliability of S-SiC, relatively large snubber ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Modeling and optimization of PCB coils for inductive power transfer systems

Xiaotong Du

The auxiliary power supply for medium voltage converters requires high insulation capability between the source and the load. Inductive power transfer technology, with an air gap between the primary and secondary coil, offers such high insulation capabilit ...

EPFL2024

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

Non-contact sensing for anomaly detection in wind turbine blades: A focus-SVDD with complex-valued auto-encoder approach

Olga Fink, Gaëtan Michel Frusque

The occurrence of manufacturing defects in wind turbine blade (WTB) production can result in significant increases in operation and maintenance costs of WTBs, reduce capacity factors of wind farms, and occasionally lead to severe and disastrous consequence ...

2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Static and Dynamic Voltage Balancing for an IGCT-Based Resonant DC Transformer

Drazen Dujic, Nikolina Djekanovic, Renan Pillon Barcelos

This paper focuses on the operational characteristics of a medium voltage resonant DC transformer based on a split capacitor IGCT 3L-NPC leg. The study delves into both the dynamic and static balancing aspects of the 3L-NPC when operating in a two-level, 5 ...

2024

Anomalous‐Chern Steering of Topological Nonreciprocal Guided Waves

Romain Christophe Rémy Fleury, Haoye Qin, Qiaolu Chen, Zhechen Zhang

Nonreciprocal topological edge states based on external magnetic bias have been regarded as the last resort for genuine unidirectional wave transport, showing superior robustness over topological states with preserved time-reversal symmetry. However, fast ...

Wiley2024

Experimental observation of topological transition in linear and nonlinear parametric oscillators

Romain Christophe Rémy Fleury, Benjamin Apffel

Parametric oscillators are examples of externally driven systems that can exhibit two stable states with opposite phase depending on the initial conditions. In this work, we propose to study what happens when the external forcing is perturbed by a continuo ...

2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Inversing the actuation cycle of dielectric elastomer actuators for a facial prosthesis

Paolo Germano, Yves Perriard, Yoan René Cyrille Civet, Alexis Boegli, Thomas Guillaume Martinez, Stefania Maria Aliki Konstantinidi, Quentin Philippe Mario De Menech

Dielectric Elastomer Actuators (DEAs) are a type of smart material described as compliant capacitors. They show impressive performances as soft actuators, such as a high strain and fast response. Nonetheless, replicating natural muscle function with DEAs h ...

Society of Photo-Optical Instrumentation Engineers (SPIE)2024

Re-design of EU DEMO with a low aspect ratio

Hartmut Zohm

The design point that had been chosen for EU DEMO in 2016 is reviewed here and a modification is proposed with a lower aspect ratio. Previously the same aspect ratio, A, was chosen for EU DEMO as in major tokamak experiments including ITER (A = 3.1), and, ...

2024

Emulating Multimemristive Behavior of Silicon Nanowire-Based Biosensors by Using CMOS-Based Implementations

Sandro Carrara, Junrui Chen, Kapil Bhardwaj

The research presented in this article draws inspiration from previous efforts aimed at replicating the functions of various solid-state memristors using a variety of materials. The memristor circuit emulator serves as a cost-effective tool for circuit des ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024