van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices

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Effects of surface rigidity and metallicity on dielectric properties and ion interactions at aqueous hydrophobic interfaces

Using classical molecular dynamics simulations, we investigate the dielectric properties at interfaces of water with graphene, graphite, hexane, and water vapor. For graphite, we compare metallic and nonmetallic versions. At the vapor-liquid water and hexa ...

AIP Publishing2022

New metric for carrier selective contacts for silicon heterojunction solar cells

Mathieu Gérard Boccard, Jakub Holovsky

Heterojunction carrier selective contacts for solar cells have gained great attention because of the ability of these contacts to efficiently collect majority carriers while hindering the recombination of minority carriers, thus resulting in the highest re ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Extended-gate field-effect transistor with aptamer functionalisation layer for measuring hormone concentration in biofluids and corresponding fabrication method

Mihai Adrian Ionescu, Shokoofeh Sheibani

The present invention concerns a biosensor (1) for sensing stress hormone cortisol concentration in a biofluid (27). The biosensor (1) comprises: an electrical transistor transducer (3) comprising a transistor gate electrode (17); a sensing electrode eleme ...

2022

Reactivity of Multimetallic Thorium Nitrides Generated by Reduction of Thorium Azides

Rosario Scopelliti, Marinella Mazzanti, Luciano Barluzzi, Fang-Che Hsueh

Thorium nitrides are likely intermediates in the reported cleavage and functionalization of dinitrogen by molecular thorium complexes and are attractive compounds for the study of multiple bond formation in f-element chemistry, but only one example of thor ...

2022

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Taifang Wang, Luca Nela

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

Functional Ink Formulation for Printing and Coating of Graphene and Other 2D Materials: Challenges and Solutions

Frank Nüesch, Jakob Heier, Sina Abdolhosseinzadeh, Mohammad Jafarpour

The properties of 2D materials are unparalleled when compared to their 3D counterparts; many of these properties are a consequence of their size reduction to only a couple of atomic layers. Metallic, semiconducting, and insulating types can be found and fo ...

WILEY2022

Near-field probing of image phonon-polaritons in hexagonal boron nitride on gold crystals

Sergejs Boroviks

Near-field mapping has been widely used to study hyperbolic phonon-polaritons in van der Waals crystals. However, an accurate measurement of the polaritonic loss remains challenging because of the inherent complexity of the near-field signal and the substr ...

AMER ASSOC ADVANCEMENT SCIENCE2022

Electron Emission Regimes of Planar Nano Vacuum Emitters

Marco Turchetti, Alberto Nardi, Yujia Yang

Recent advancements in nanofabrication have enabled the creation of vacuum electronic devices with nanoscale free-space gaps. These nanoelectronic devices promise the benefits of cold-field emission and transport through free space, such as high nonlineari ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Andras Kis, Aleksandra Radenovic, Yanfei Zhao, Michal Daniel Macha, Mukeshchand Thakur, Jing Zhang, Mukesh Kumar Tripathi, Hyungoo Ji

Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the m ...

ROYAL SOC CHEMISTRY2022

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Local stiffness and work function variations of hexagonal boron nitride on Cu(111)

Klaus Kern, Markus Ternes, Abhishek Grewal

Combined scanning tunnelling and atomic force microscopy using a qPlus sensor enables the measurement of electronic and mechanic properties of two-dimensional materials at the nanoscale. In this work, we study hexagonal boron nitride (h-BN), an atomically ...

BEILSTEIN-INSTITUT2021

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