Publication

A spectromicroscopy study of the Al GaS interface: Evidence of band bending lateral inhomogeneities

Giorgio Margaritondo, Helmuth Berger
1999
Journal Articles

Abstract

We performed a spectromicroscopy experiment to find evidence of lateral inhomogeneities in the band bending for the Al/GaS system. Microimages of the interface tuned on the Al 2p con levels revealed localized chemical inhomogeneities in proximity of the edge of the Al overlayer. A careful analysis of the photoemission spectra supports these conclusions and relates the inhomogeneities to band bending variations. The micron-size lateral scale for these features is similar to that of other interfaces. (C) 1999 Elsevier Science B.V. All rights reserved.

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https://infoscience.epfl.ch/entities/publication/3325ea6d-6986-411a-a5f2-e3efe708ef61

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Giorgio Margaritondo, Helmuth Berger
1999
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/3325ea6d-6986-411a-a5f2-e3efe708ef61

About this result

Related concepts (12)

Electronic band structure

In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called band gaps or forbidden bands). Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large, periodic lattice of atoms or molecules.

Band bending

In solid-state physics, band bending refers to the process in which the electronic band structure in a material curves up or down near a junction or interface. It does not involve any physical (spatial) bending. When the electrochemical potential of the free charge carriers around an interface of a semiconductor is dissimilar, charge carriers are transferred between the two materials until an equilibrium state is reached whereby the potential difference vanishes.

Band diagram

In solid-state physics of semiconductors, a band diagram is a diagram plotting various key electron energy levels (Fermi level and nearby energy band edges) as a function of some spatial dimension, which is often denoted x. These diagrams help to explain the operation of many kinds of semiconductor devices and to visualize how bands change with position (band bending). The bands may be coloured to distinguish level filling. A band diagram should not be confused with a band structure plot.

Related publications (7)

A spectromicroscopy study of the Al GaS interface: Evidence of band bending lateral inhomogeneities

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