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Publication

High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu
2019
Journal Articles

Abstract

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate based on sidewall depletion achieved by nanostructured gate with large work-function metal. The devices presented threshold voltage (VTH) over 0.6 V at 1 μA/mm, large current density (IDS) up to 590 mA/mm, low specific on resistance (RON,SP) of 1.33 mΩ·cm2, high ON/OFF ratio over 1010 and large breakdown voltage (VBR) of 1080 V at 1 μA/mm with grounded substrate. The excellent high power FOM of 877 MW/cm2 reveals the potential of our approach to obtain E-mode operation, while maintaining exceptional on-state performance and high VBR.

Official source

https://infoscience.epfl.ch/entities/publication/32afc282-4e33-4f92-94ad-356e7cc06d35

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Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu
2019
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/32afc282-4e33-4f92-94ad-356e7cc06d35

About this result

Related concepts (24)

High voltage

High voltage electricity refers to electrical potential large enough to cause injury or damage. In certain industries, high voltage refers to voltage above a certain threshold. Equipment and conductors that carry high voltage warrant special safety requirements and procedures. High voltage is used in electrical power distribution, in cathode ray tubes, to generate X-rays and particle beams, to produce electrical arcs, for ignition, in photomultiplier tubes, and in high-power amplifier vacuum tubes, as well as other industrial, military and scientific applications.

Work function

In solid-state physics, the work function (sometimes spelt workfunction) is the minimum thermodynamic work (i.e., energy) needed to remove an electron from a solid to a point in the vacuum immediately outside the solid surface. Here "immediately" means that the final electron position is far from the surface on the atomic scale, but still too close to the solid to be influenced by ambient electric fields in the vacuum. The work function is not a characteristic of a bulk material, but rather a property of the surface of the material (depending on crystal face and contamination).

High-electron-mobility transistor

A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.

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High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

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