Publication

High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu
2019
Journal Articles

Abstract

In this work, we demonstrate high-performance Enhancement-mode (E-mode) GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors (MOS-HEMTs) on Si substrate based on sidewall depletion achieved by nanostructured gate with large work-function metal. The devices presented threshold voltage (VTH) over 0.6 V at 1 μA/mm, large current density (IDS) up to 590 mA/mm, low specific on resistance (RON,SP) of 1.33 mΩ·cm2, high ON/OFF ratio over 1010 and large breakdown voltage (VBR) of 1080 V at 1 μA/mm with grounded substrate. The excellent high power FOM of 877 MW/cm2 reveals the potential of our approach to obtain E-mode operation, while maintaining exceptional on-state performance and high VBR.

Official source

https://infoscience.epfl.ch/entities/publication/32afc282-4e33-4f92-94ad-356e7cc06d35

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Minghua Zhu
2019
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/32afc282-4e33-4f92-94ad-356e7cc06d35

About this result

Related concepts (32)

High voltage

High voltage electricity refers to electrical potential large enough to cause injury or damage. In certain industries, high voltage refers to voltage above a certain threshold. Equipment and conductors that carry high voltage warrant special safety requirements and procedures. High voltage is used in electrical power distribution, in cathode ray tubes, to generate X-rays and particle beams, to produce electrical arcs, for ignition, in photomultiplier tubes, and in high-power amplifier vacuum tubes, as well as other industrial, military and scientific applications.

High-electron-mobility transistor

A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.

Threshold voltage

The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead.

Related publications (32)

High-performance nanowire-based E-mode Power GaN MOSHEMTs with large workfunction gate metal

Chat with Graph Search

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs