On performance of series connected CMOS vertical hall devices

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GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...

In this paper, we review some of the main methods to characterize on-state and off-state losses in wide-band-gap devices under switching conditions. In the off-state, we will discuss about losses related to charging and discharging the output capacitance i ...

In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

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The invention relates to a method for operating a power switching device, particularly a wide bandgap power switching device, in a power application, particularly in a converter, comprising the steps of:- checking (S2) a transient voltage of or related to ...

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On performance of series connected CMOS vertical hall devices

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Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Enablers for Overcurrent Capability of Silicon-Carbide-Based Power Converters: An Overview

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

DC Transformer Impact on Voltage Dynamics in Hybrid AC-DC Power Distribution Networks

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Protection unit for wide bandgap power switching device and method for operating the wide bandgap power switching device

Gate unit for a gate-commutated thyristor and integrated gate-commutated thyristor

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Modeling, Optimization and Design of High Power Medium Frequency Transformers

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

Development of next-generation microfluidic systems for enhanced, faster, and cost-effective immunoassays for tissue diagnostics - Ac electrothermal flow & Acoustofluidics