Publication

Analysis of a Novel BAW-based Power Amplifier

Christian Enz
2009
Conference Papers

Abstract

A novel MEMS-based co-designed power amplifier is presented. To introduce the analysis and evaluate the impact of realistic on-chip losses, two design approaches are discussed and compared. Then the study of the novel circuit, based on the integration of high-Q BAW resonators with a Class E PA, is described. The integration method is explained, demonstrating how a careful co-design can allow to reach optimum performances. To confirm the theory a design example in a standard 0.18 mum CMOS technology is provided, showing an output power of 14.7 dBm and a drain efficiency up to 56% at 2.44 GHz.

Official source

https://infoscience.epfl.ch/entities/publication/2c0d5c39-b544-4d8d-bc09-d28c5aa0a872

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Analysis of a Novel BAW-based Power Amplifier

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