High-Frequency Scaled MoS2 Transistors

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Individual transistors based on emerging reconfigurable nanotechnologies exhibit electrical conduction for both types of charge carriers. These transistors (referred to as Reconfigurable Field-Effect Transistors (RFETs)) enable dynamic reconfiguration to d ...

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This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO ...

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High-Frequency Scaled MoS2 Transistors

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Utilizing XMG-based Synthesis to Preserve Self-Duality for RFET-Based Circuits

Semiconducting two dimensional transition metal dichalcogenides via solution-processable routes

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

A 500 x 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Extended-gate field-effect transistor with aptamer functionalisation layer for measuring hormone concentration in biofluids and corresponding fabrication method

Strained crystalline nanomechanical resonators with quality factors above 10 billion

Thermodynamics of organic electrochemical transistors

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices