Constant-current study of dielectric breakdown of Pb(Zr,Ti)O-3 ferroelectric film capacitors

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Although far from optimal, flooding is an in- dispensable message dissemination technique for network- wide broadcast within mobile ad hoc networks (MANETs). As such, the plain flooding algorithm provokes a high number of unnecessary packet rebroadcasts, causing contention, packet collisions and ultimately wasting precious limited bandwidth. We explore the phase transition phenomenon observed in percolation theory and random graphs as a basis for defining probabilistic flooding algorithms. By considering id

Piezoelectric response nonlinearity is approached using the Preisach description of hysteretic systems as collection of distributed bistable units. The Preisach model and its recent physical interpretation in terms of moving domain wall in a stochastically described pinning field are reviewed. It is shown that such an approach can effectively render not only the piezoelectric coefficient field dependences but also the field-response hysteresis, especially in the well-known case of linear piezoelectric field

The Boron-Doped Diamond (BDD) electrode is a new electrode material with high stability, even at high anodic potential. Furthermore BDD is not prone to fouling. Due to these properties, BDD can provide new opportunities in electrochem. synthesis of org. and inorg. compds. Two examples are given to demonstrate the feasibility of electroorg. synthesis on BDD anodes. The first example is the oxidn. of phenol to benzoquinone, an important intermediate in fine org. synthesis. The second example is the oxidn. of

In this communication we address two issues essential for low-voltage memory applications of ferroelectric thin films: the size effect on polarization switching, and polarization fatigue. According to the proposed concept, both of these phenomena are controlled by local injection of charge into the interfacial layers of the ferroelectric film. In the experimental part of this work, we show that the entrapped charge relaxation can be enhanced by introducing a thin RuO2 layer into the top interface of the Pt/

Microstructure, structural defects, and piezoelectric response of bismuth titanate (Bi4Ti3O12)(1-x) and bismuth titanium niobate (Bi3TiNbO9)(x) solid solution with x=0.05 and 0.2 were investigated. Depending on x and on the sintering temperature different microstructures and piezoelectric responses were observed. For a low content in Bi3TiNbO9 (x=0.05) and a high sintering temperature (1130 degreesC), a coarse grain size is present, the number of structural defects within the grain is small, and there is a

The effect of 1 MeV ion implantation on leakage conduction, dielectric and ferroelectric properties of the Pt/Pb(ZrxTi1-x)(2)O-3/Pt capacitors is studied for a wide range of implantation doses (10(10)-10(16) cm(-2)). It is shown that the implantation of Pt+, with an implant and vacancy profile peaking at the bottom interface and a dose within the range of 10(13)-10(16) cm(-2), provokes a strong suppression of the leakage conduction and ferroelectric hysteresis. In addition, ion implantation results in a dec

In situ reactively sputter deposited, 300-nm-thick Pb(Zrx,Ti1-x)O3 thin films were investigated as a function of composition, texture, and different electrodes (Pt,RuO2). X-ray diffraction analysis, ferroelectric, dielectric, and piezoelectric measurements were carried out. While for dielectric properties bulklike contributions from lattice as well as from domains are observed, domain wall contributions to piezoelectric properties are very much reduced in the morphotropic phase boundary (MPB) region. Permit

The shape of the grains and the granulometry distribution of the PZT powder are the main factor influencing the densification. In addition, we shown that a higher concentration of PZT powder in the ink with a right rheology of the ink improves the density of PZT film. So, we obtained a PZT thick layer with 97% in density with no addition of glassy phase.

A micro-pump for medical applications is being developed using organometallic derived PZT thin films and silicon micromachining technology. Critical issues include the deposition of 'thick' PZT films (1 to 2 mu m thickness), film processing compatibility with available Si/SixNy/Ta/Pt structures and the establishing of piezoelectric poling parameters. A processing technique for the preparation of thick PZT films is presented. Piezoelectric properties are characterized by both direct method using alternating

Dielectric properties of perovskites are studied both to gain insight into fundamental aspects of the freezing of polar disorder, and to investigate their technological potential. The dynamics of freezing of polar disorder is investigated in single crystals of Li-doped potassium tantalate (K1-xLixTaO3) and lead magnesium niobate (pb[Mg1/3Nb2/3]O3). For the mixed crystal K1-xLixTaO3, the dielectric permittivity ε (ω) is measured at various temperatures and for frequencies ω/2π ranging from 2 × 10-4 to 109 Hz

We present measurements for the resistivity of

c' axis oriented YBa2Cu3O7-δ (YBCO) films grown on (100) SrTiO3 substrates by both laser ablation and ion beam sputtering. The effect of the magnetic field on the resistivity is investigated with the field parallel to the

c' axis. The zero field transition widths vary from 1 K to 4 K in different films. However the data exhibits 3d X-Y critical scaling having introduced an `effective' magnetic field characteristic of the length scale of the disorder in the f

Constant-current study of dielectric breakdown of Pb(Zr,Ti)O-3 ferroelectric film capacitors

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Probabilistic Broadcast for Flooding in Wireless Mobile Ad hoc Networks

Preisach modeling of piezoelectric nonlinearity in ferroelectric ceramics

Electrochemical synthesis of inorganic and organic compounds with Boron-Doped diamond electrodes

Downscaling of Pb(Zr,Ti)O-3 film thickness for low-voltage ferroelectric capacitors: Effect of charge relaxation at the interfaces

Microstructure, structural defects, and piezoelectric response of Bi4Ti3O12 modified by Bi3TiNbO9

Pt-ion-implantation-induced suppression of leakage conduction in Pt/Pb(ZrxTi1-x)O-3/Pt capacitors

Domain and lattice contributions to dielectric and piezoelectric properties of Pb(Zr x , Ti 1− x )O 3 thin films as a function of composition

Parameters influencing PZT thick films densification

PZT films for micro-pumps

Dielectric properties of perovskites with polar disorder (K1-xLix TaO3 and Pb[Mg1/3Nb2/3]O3) and of SrTiO3 films

3d X-Y scaling of the resistivity and the effect of disorder in YBa2Cu3O7-δ thin films