Publication

Search for Photoinduced Dipoles at Heterojunction Interfaces

Giorgio Margaritondo
1993
Journal Articles

Abstract

We tried to apply the mechanism of surface photovoltage (SPV) to a particular class of semiconductor heterojunctions, those having staggered gaps, with the aim of photoinducing charges of opposite sign at the interface notches and of creating a dipole that modifies the band discontinuities. We performed photoemission experiments at room temperature and at low temperature on the Si/InP(110) heterojunction for a thin coverage of silicon on n-doped and p-doped InP substrates. We found a shift of all the electronic features (both from Si and from InP) to higher binding energies at low temperature when using the n-type InP. No shifts were observed for p-type InP, where we expected to find a photoinduced interface dipole and a consequent shift in opposite directions of Si and InP structures. The implications of these results are discussed.

Official source

https://infoscience.epfl.ch/entities/publication/282efa39-16ff-4f0d-b8d0-db6804f06031

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Giorgio Margaritondo
1993
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/282efa39-16ff-4f0d-b8d0-db6804f06031

About this result

Related concepts (32)

Heterojunction

A heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably.

High-electron-mobility transistor

A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.

Anderson's rule

Anderson's rule is used for the construction of energy band diagrams of the heterojunction between two semiconductor materials. Anderson's rule states that when constructing an energy band diagram, the vacuum levels of the two semiconductors on either side of the heterojunction should be aligned (at the same energy). It is also referred to as the electron affinity rule, and is closely related to the Schottky–Mott rule for metal–semiconductor junctions. Anderson's rule was first described by R. L. Anderson in 1960.

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Search for Photoinduced Dipoles at Heterojunction Interfaces

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