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Publication

Tunable Polaronic Conduction in Anatase TiO2

László Forró, Helmuth Berger, Arnaud Magrez, Marco Grioni, Luca Moreschini, Simon Karl Moser, Jacim Jacimovic
2013
Journal Articles

Abstract

Oxygen vacancies created in anatase TiO2 by UV photons (80–130 eV) provide an effective electron-doping mechanism and induce a hitherto unobserved dispersive metallic state. Angle resolved photoemission reveals that the quasiparticles are large polarons. These results indicate that anatase can be tuned from an insulator to a polaron gas to a weakly correlated metal as a function of doping and clarify the nature of conductivity in this material.

Official source

https://infoscience.epfl.ch/entities/publication/27fee252-d350-487c-bc4a-e598cd9b7ca6

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László Forró, Helmuth Berger, Arnaud Magrez, Marco Grioni, Luca Moreschini, Simon Karl Moser, Jacim Jacimovic
2013
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/27fee252-d350-487c-bc4a-e598cd9b7ca6

About this result

Related concepts (6)

Polaron

A polaron is a quasiparticle used in condensed matter physics to understand the interactions between electrons and atoms in a solid material. The polaron concept was proposed by Lev Landau in 1933 and Solomon Pekar in 1946 to describe an electron moving in a dielectric crystal where the atoms displace from their equilibrium positions to effectively screen the charge of an electron, known as a phonon cloud. This lowers the electron mobility and increases the electron's effective mass.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Electron mobility

In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field E is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, .

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