Publication

High efficiency THz generation in DSTMS, DAST and OH1 pumped by Cr:forsterite laser

Christoph Peter Hauri
2015
Journal Articles

Abstract

We investigated Terahertz generation in organic crystals DSTMS, DAST and OH1 directly pumped by a Cr:forsterite laser at central wavelength of 1.25 mu m. This pump laser technology provides a laser-to-THz energy conversion efficiency higher than 3 percent. Phase-matching is demonstrated over a broad 0.1-8 THz frequency range. In our simple setup we achieved hundred mu J pulses in tight focus resulting in electric and magnetic field larger than 10 MV/cm and 3 Tesla. (C) 2015 Optical Society of America

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https://infoscience.epfl.ch/entities/publication/275d08bc-abf6-4e52-984d-c963c4b24d1d

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Christoph Peter Hauri
2015
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/275d08bc-abf6-4e52-984d-c963c4b24d1d

About this result

Related concepts (16)

Terahertz radiation

Terahertz radiation – also known as submillimeter radiation, terahertz waves, tremendously high frequency (THF), T-rays, T-waves, T-light, T-lux or THz – consists of electromagnetic waves within the ITU-designated band of frequencies from 0.3 to 3 terahertz (THz), although the upper boundary is somewhat arbitrary and is considered by some sources as 30 THz. One terahertz is 1012 Hz or 1000 GHz. Wavelengths of radiation in the terahertz band correspondingly range from 1 mm to 0.1 mm = 100 μm.

Laser diode

A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission.

Gallium nitride

Gallium nitride () is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.

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