Spintronic Majority Gates

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

The emergence of wide-band-gap (WBG) power transistors with low conduction losses and high-speed switching speeds has paved the way for more-than-ever efficient power electronics systems and huge energy saving potentials. Likewise, power density- the ratio ...

The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

Low ON-resistance of advanced superjunction (SJ) and GaN-on-Si transistors is of great importance in power converters, however, the anomalous loss in their output capacitance (C OSS ) severely limits their performance. In this work, we use an energy-orient ...

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

In this letter, we present a new concept for normally-off AlGaN/GaN-on-Si MOS-HEMTs based on the combination of p-GaN, tri-gate and MOS structures to achieve high threshold voltage (V-TH) and low on-resistance (R-ON). The p-GaN is used to engineer the band ...

Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most versatile technological solutions for building tunneling field effect transistors because of the sharp and potentially clean interfaces resulting from van der Waals assembly. Seve ...

Spintronic Majority Gates

Chat with Graph Search

Pushing the Limits of Efficiency and Power Density in High-Frequency Power Conversion Based on Wide-Band-Gap Technologies

Diamond on GaN integration for power semiconductor devices with efficient thermal management

GaN-based power devices: Physics, reliability, and perspectives

Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments

Multi-channel nanowire devices for efficient power conversion

Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

P-GaN Tri-Gate MOS Structure for Normally-Off GaN Power Transistors

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake