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Electronic properties of ideal and engineered metal/semiconductor interfaces

Christophe Berthod
1999
Theses

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Christophe Berthod
1999
Theses

Official source

Related publications (4)

https://infoscience.epfl.ch/entities/publication/247bf8cd-3b5d-42e2-88d9-5eec5685d566

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Related publications (4)

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

Cem Alper

The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...

EPFL2017

Nonvolatile Memory Cells Based on MoS2/graphene heterostructures

Andras Kis, Daria Krasnozhon, Simone Bertolazzi

Memory cells are an important building block of digital electronics. We combine here the unique electronic properties of semiconducting monolayer MoS2 with the high conductivity of graphene to build a 2D heterostructure capable of information storage. MoS2 ...

Amer Chemical Soc2013

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

Nicolas Grandjean, Jean-François Carlin, Eric Feltin

We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress (with a partially opened channel), and a negative gate bias stress (with so ...

2009