Publication

Multi-Channel AlScN/GaN RF HEMTs Grown by Metal-Organic Chemical Vapor Deposition

2026

Abstract

We demonstrate multi-channel AlScN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapor deposition (MOCVD). The five-channel structure exhibits a high electron mobility (μ) of 1030 cm2/V·s together with a high carrier concentration (ns) of 3.58×1013 cm-2. Devices with a gate length (Lg) of 95 nm and a total gate width (Wg) of 2×15 μm were fabricated using a tri-gate architecture with varying fin widths. The 300 nm fin width device achieves a current densities of 4.2 A/mm with improved linearity, while reducing the fin width to 75 nm enhances electrostatic control over all channels and yields fT/fMAX of 70/163 GHz. The passivated devices show retain a stable ID,max under repeated measurements and an off-state breakdown of 18.5 V at Lgd = 400 nm. These results highlight the promise of MOCVD-grown AlScN/GaN multi-channel HEMTs for RF applications, with strong DC and small-signal RF characteristics, motivating further study of its large-signal performance for mm-wave operation.

Official source

https://infoscience.epfl.ch/entities/publication/23299f4e-ccb6-4ee6-a92f-a0c9f564dbe6

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

2026

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/23299f4e-ccb6-4ee6-a92f-a0c9f564dbe6

About this result

Related concepts (32)

Multigate device

A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).

High-electron-mobility transistor

A high-electron-mobility transistor (HEMT or HEM FET), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device.

Electron mobility

In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field E is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, .

Related publications (32)

Multi-Channel AlScN/GaN RF HEMTs Grown by Metal-Organic Chemical Vapor Deposition

Chat with Graph Search

Vertically stacked double-channel tri-gate GaN HEMT and SBD with enhanced reverse conduction performance

Non-volatile memories based on patterned metal–semiconductor heterostructures of niobium disulfide and molybdenum disulfide

Linear analysis of the effect of shaping on trapped electron mode instability: from a reduced model to gyro-kinetics