Publication

QUANTITATIVE STUDY OF THE INCORPORATION OF GROUP-III ELEMENTS IN CHEMICAL BEAM EPITAXY OF GAINASP ALLOYS

Jean-François Carlin
1993
Journal Articles

Abstract

We have studied the indium and gallium incorporation during growth by chemical beam epitaxy of GaInAs, GaInP and GaInAsP alloys. TMIn, TEGa, cracked AsH3 and PH3 sources were used. The indium incorporation ratio remains nearly constant over the range of parameters investigated. whereas the gallium incorporation depends on the indium concentration, on the phosphorus concentration and on the growth temperature. The gallium incorporation ratio decreases linearly with indium content of the grown layer and the effect of the phosphorus and of the growth temperature during epitaxy of quaternary alloys can be described by a linear interpolation between the behavior observed on the ternary alloys.

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https://infoscience.epfl.ch/entities/publication/22d09a33-396a-4ef7-9591-d6367fac4d7a

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Jean-François Carlin
1993
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/22d09a33-396a-4ef7-9591-d6367fac4d7a

About this result

Related concepts (32)

Epitaxy

Epitaxy (prefix epi- means "on top of”) refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material.

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A copper indium gallium selenide solar cell (or CIGS cell, sometimes CI(G)S or CIS cell) is a thin-film solar cell used to convert sunlight into electric power. It is manufactured by depositing a thin layer of copper indium gallium selenide solution on glass or plastic backing, along with electrodes on the front and back to collect current. Because the material has a high absorption coefficient and strongly absorbs sunlight, a much thinner film is required than of other semiconductor materials.

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QUANTITATIVE STUDY OF THE INCORPORATION OF GROUP-III ELEMENTS IN CHEMICAL BEAM EPITAXY OF GAINASP ALLOYS

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