Witnessing the early semiconductor laser development at Bell Telephone Laboratories, Inc

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Early works(1) and recent advances in thin-film lithium niobate (LiNbO3) on insulator have enabled low-loss photonic integrated circuits(2,3), modulators with improved half-wave voltage(4,5), electro-optic frequency combs(6) and on-chip electro-optic devic ...

Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) and blue (461 nm) regime are demonstrated. The GaN-based edge-emitting laser diodes were coupled to high-quality on-chip micro-resonators for ...

Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. Exter ...

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

Ultrashort laser pulses, i.e., pulses emitted shorter than a picosecond, can tailor material properties by introducing permanent modifications locally in three dimensions. Remarkably, under a certain exposure condition, these modifications are accompanied ...

Stable and tunable integrated lasers are fundamental building blocks for applications from spectroscopy to imaging and communication. Here the authors present a narrow linewidth hybrid photonic integrated laser with low frequency noise and fast linear wave ...

Recently, random lasing in complex networks has shown efficient lasing over more than 50 localised modes, promoted by multiple scattering over the underlying graph. If controlled, these network lasers can lead to fast-switching multifunctional light source ...

III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, ...

Devices based on two-dimensional (2D) semiconductors hold promise for the realization of compact and versatile on-chip interconnects between electrical and optical signals. Although light emitting diodes (LEDs) are fundamental building blocks for integrate ...

A polariton is a quasiparticle formed from the coupling of a confined photon in a cavity to electronic excitation, like exciton in a semiconductor. This dissertation reports on series of experiments in confined polariton interaction by design, fabrication, ...

Second harmonic generation microscopy is used to image interfaces or non-centrosymmetric structures and molecules. Two-photon fluorescence microscopy can image molecules within cells without using markers. Thus those technics have lead to advances in our u ...

Avalanche multiphoton photoluminescence (AMPL) is observed from coupled Au–Al nanoantennas under intense laser pumping, which shows more than one order of magnitude emission intensity enhancement and distinct spectral features compared with ordinary metall ...

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...

The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

Squaraines are organic dyes showing the advantages of a simple synthesis, high absorption coefficients and tunable bandgaps from the visible to the near-infrared (NIR) region. Their molecular structure is based on a polymethine chain and a donor-acceptor-d ...

A light pulse source (100), being adapted for generating repetitive optical pulses (1), comprises a continuous wave cw laser device (10) being arranged for providing cw laser light (2), an optical waveguide (20) being optically coupled with the cw laser de ...

Crystal phase engineering is an exciting pathway to enhance the properties of conventional semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices whereas wurtzite (WZ) phosphide alloys enable efficient light emission in ...

Photonic chip-based soliton microcombs have shown rapid progress and have already been used in many system-level applications. There has been substantial progress in realizing soliton microcombs that rely on compact laser sources, culminating in devices th ...

Gallium phosphide (GaP) is an indirect-bandgap semiconductor used widely in solid-state lighting. Despite numerous intriguing optical properties-including large chi ((2)) and chi ((3)) coefficients, a high refractive index (>3) and transparency from visibl ...

Witnessing the early semiconductor laser development at Bell Telephone Laboratories, Inc

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Ultrafast tunable lasers using lithium niobate integrated photonics

Single-frequency violet and blue laser emission from AlGaInN photonic integrated circuit chips

Sub-kHz-Linewidth External-Cavity Laser (ECL) With Si3N4 Resonator Used as a Tunable Pump for a Kerr Frequency Comb

Semiconductor-based device architectures in multimaterial fibers

Femtosecond laser-induced modifications and self-organization in complex glass systems

Low-noise frequency-agile photonic integrated lasers for coherent ranging

Sensitivity and spectral control of network lasers

Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Room-temperature electrical control of polarization and emission angle in a cavity-integrated 2D pulsed LED

Interaction of Confined Polaritons in Microcavity Structures

A tunable femtosecond fiber laser source for multiphoton emission microscopy

Hot carrier-mediated avalanche multiphoton photoluminescence from coupled Au–Al nanoantennas

Nanopillars Enabling III-V Integration on Si (100) and (111)

Diamond on GaN integration for power semiconductor devices with efficient thermal management

GaN vertical power devices on silicon substrates

Synthesis of NIR-Absorbing Squaraine Dyes and their Use in Organic Upconversion Devices

Generating optical pulses via a soliton state of an optical microresonator coupled with a chip based semiconductor laser

Crystal Phase Engineering in III-V Semiconductor Films: from Epitaxy to Devices

Chip-based soliton microcomb module using a hybrid semiconductor laser

Integrated gallium phosphide nonlinear photonics