Dielectric strengthIn physics, the term dielectric strength has the following meanings: for a pure electrically insulating material, the maximum electric field that the material can withstand under ideal conditions without undergoing electrical breakdown and becoming electrically conductive (i.e. without failure of its insulating properties). For a specific piece of dielectric material and location of electrodes, the minimum applied electric field (i.e. the applied voltage divided by electrode separation distance) that results in breakdown.
Metal–semiconductor junctionIn solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.
Kerr effectThe Kerr effect, also called the quadratic electro-optic (QEO) effect, is a change in the refractive index of a material in response to an applied electric field. The Kerr effect is distinct from the Pockels effect in that the induced index change is directly proportional to the square of the electric field instead of varying linearly with it. All materials show a Kerr effect, but certain liquids display it more strongly than others. The Kerr effect was discovered in 1875 by Scottish physicist John Kerr.
Scanning tunneling microscopeA scanning tunneling microscope (STM) is a type of microscope used for imaging surfaces at the atomic level. Its development in 1981 earned its inventors, Gerd Binnig and Heinrich Rohrer, then at IBM Zürich, the Nobel Prize in Physics in 1986. STM senses the surface by using an extremely sharp conducting tip that can distinguish features smaller than 0.1 nm with a 0.01 nm (10 pm) depth resolution. This means that individual atoms can routinely be imaged and manipulated.
Surface chargeA surface charge is an electric charge present on a two-dimensional surface. These electric charges are constrained on this 2-D surface, and surface charge density, measured in coulombs per square meter (C•m−2), is used to describe the charge distribution on the surface. The electric potential is continuous across a surface charge and the electric field is discontinuous, but not infinite; this is unless the surface charge consists of a dipole layer. In comparison, the potential and electric field both diverge at any point charge or linear charge.
3D film3D films are motion pictures made to give an illusion of three-dimensional solidity, usually with the help of special glasses worn by viewers. They have existed in some form since 1915, but had been largely relegated to a niche in the motion picture industry because of the costly hardware and processes required to produce and display a 3D film, and the lack of a standardized format for all segments of the entertainment business.
MagnetizationIn classical electromagnetism, magnetization is the vector field that expresses the density of permanent or induced magnetic dipole moments in a magnetic material. Movement within this field is described by direction and is either Axial or Diametric. The origin of the magnetic moments responsible for magnetization can be either microscopic electric currents resulting from the motion of electrons in atoms, or the spin of the electrons or the nuclei. Net magnetization results from the response of a material to an external magnetic field.
Tunnel diodeA tunnel diode or Esaki diode is a type of semiconductor diode that has effectively "negative resistance" due to the quantum mechanical effect called tunneling. It was invented in August 1957 by Leo Esaki, Yuriko Kurose, and Takashi Suzuki when they were working at Tokyo Tsushin Kogyo, now known as Sony. In 1973, Esaki received the Nobel Prize in Physics, jointly with Brian Josephson, for discovering the electron tunneling effect used in these diodes.
Quantum tunnellingIn physics, quantum tunnelling, barrier penetration, or simply tunnelling is a quantum mechanical phenomenon in which an object such as an electron or atom passes through a potential energy barrier that, according to classical mechanics, the object does not have sufficient energy to enter or surmount. Tunneling is a consequence of the wave nature of matter, where the quantum wave function describes the state of a particle or other physical system, and wave equations such as the Schrödinger equation describe their behavior.
TunnelA tunnel is an underground passageway, dug through surrounding soil, earth or rock, and enclosed except for the entrance and exit, commonly at each end. A pipeline is not a tunnel, though some recent tunnels have used immersed tube construction techniques rather than traditional tunnel boring methods. A tunnel may be for foot or vehicular road traffic, for rail traffic, or for a canal. The central portions of a rapid transit network are usually in the tunnel.
Pockels effectThe Pockels effect or Pockels electro-optic effect, also known as the linear electro-optic effect, is named after Friedrich Carl Alwin Pockels who studied the effect in 1893. The Pockels effect is a directionally dependent linear variation in the refractive index of an optical medium that occurs in response to the application of an electric field. The non-linear counterpart, the Kerr effect, causes changes in the refractive index at a rate proportional to the square of the applied electric field.
Thermal conductivityThe thermal conductivity of a material is a measure of its ability to conduct heat. It is commonly denoted by , , or . Heat transfer occurs at a lower rate in materials of low thermal conductivity than in materials of high thermal conductivity. For instance, metals typically have high thermal conductivity and are very efficient at conducting heat, while the opposite is true for insulating materials like mineral wool or Styrofoam.
