Publication

Development of a numerical simulation tool to study uniformity of large area PECVD film processing

Laurent Fabien Hubert Sansonnens
2003
Journal Articles

Abstract

A numerical two dimensional model to calculate the deposition uniformity over the whole electrode surface in large area rectangular plasma enhanced chemical vapour deposition reactors is presented. In this model, the three dimensional mass and species continuity equations are averaged over the electrode gap, which is small compared to the lateral dimensions of the plasma reactor, to obtain the two dimensional averaged transport equations. The model was applied to the particular case of silicon nitride deposition by selecting a limited chemistry model, including 8 neutral species and nine gas phase reactions. The results are compared with uniformity profiles obtained in a UNAXIS KAI-I 800 Plasmabox(R) reactor. (C) 2002 Elsevier Science B.V. All rights reserved.

Official source

https://infoscience.epfl.ch/entities/publication/1ec39376-5ffe-4844-990c-765b28c0b9ec

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Laurent Fabien Hubert Sansonnens
2003
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/1ec39376-5ffe-4844-990c-765b28c0b9ec

About this result

Related concepts (32)

Chemical vapor deposition

Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber.

Plasma-enhanced chemical vapor deposition

Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. The plasma is generally created by radio frequency (RF) (alternating current (AC)) frequency or direct current (DC) discharge between two electrodes, the space between which is filled with the reacting gases.

Evaporation (deposition)

Evaporation is a common method of thin-film deposition. The source material is evaporated in a vacuum. The vacuum allows vapor particles to travel directly to the target object (substrate), where they condense back to a solid state. Evaporation is used in microfabrication, and to make macro-scale products such as metallized plastic film. Evaporation involves two basic processes: a hot source material evaporates and condenses on the substrate. It resembles the familiar process by which liquid water appears on the lid of a boiling pot.

Related publications (32)

Development of a numerical simulation tool to study uniformity of large area PECVD film processing

Chat with Graph Search

Combining structural and functional properties through microstructure engineering using AM

Fabrication and Characterization of Transparent Stretchable Electrodes

Structural phases and electrochemical properties of 2D MoS2for supercapacitor applications