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Neuromorphic computing aims to achieve energy-efficient parallel processing by emulating the human brain. Computation-in-memory (CiM) using magnetic tunnel junction (MTJ) is a promising approach due to its non-volatility, high endurance, and CMOS compatibility. Co 2 MnSi/MgO/Co 2 MnSi MTJs show high tunneling magnetoresistance (TMR) ratios. We design and analyze binary neural networks (BNNs) on MTJ-CiM circuits by comparing time- and voltage-difference methods using circuit simulations. Design guidelines are derived from resistance scaling, delay, and TMR-dependent margins. To counter binarization accuracy loss of the BNN, we apply gradient descent with binary weights with a scheduling scheme and achieve 94% accuracy on the MNIST dataset. Using higher TMR improves robustness against MTJ variability and limits reductions in accuracy to