Publication

ELDRS in a commercial 28nm CMOS technology

Gennaro Termo
2025

Abstract

—Evidence of Enhanced Low-Dose-Rate Sensitivity (ELDRS) in TID-induced leakage current increase was observed in ring-oscillators and SRAMs in 28nm CMOS technology exposed to ultra-high doses. Elevated temperature irradiation on isolated devices is used to evaluate the dependence of ELDRS on bias conditions, device size, and threshold voltage. The results obtained show that irradiation at high temperature can represent reasonably well ELDRS, providing a viable solution for accelerated radiation tests.

Official source

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.