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Sub-meV Photoluminescence Linewidth and >106 cm2/Vs Electron Mobility in AlGaAs/GaAs Quantum Wells Grown by Metallorganic Vapor Phase Epitaxy on Slightly Misoriented Substrates

Elyahou Kapon, Alok Rudra, Benjamin Dwir, Daniel Oberli, Nicolas Moret
2006
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Elyahou Kapon, Alok Rudra, Benjamin Dwir, Daniel Oberli, Nicolas Moret
2006
Journal Articles

Official source

Related publications (16)

https://infoscience.epfl.ch/entities/publication/19ccf53e-a0cc-462e-ad07-8dd4a8bc0698

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Related publications (16)

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GaN-based devices are ubiquitous in everyday life, ranging from InGaN/GaN light-emitting diodes (LEDs) for illumination to AlGaN/GaN high-electron-mobility transistors for compact power supplies. Nevertheless, despite the tremendous development in the past ...

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Murunskite - a new class of functional material

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The subject of the present work is discovery and in-depth characterization of a new class of functional materials. Tuning of the bond polarity and orbital occupation with a goal of establishing balance between localization and delocalization of electrons - ...

EPFL2023

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

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Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022