Active Self-Switching Methods for Emerging Monolithic Bidirectional Switches Applied to Diode-Less Converters

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Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology

In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...

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Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

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The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...

PERGAMON-ELSEVIER SCIENCE LTD2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

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GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

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High frequency IGCT operation for DC transformer

Gabriele Ulissi

In spite of the dominance of ac technology for the vast majority of power transmission and distribution since the late 19th century, the past decades have seen an increase in use of dc electrical power. In particular, this has been the case both in high vo ...

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Shoot-Through Protection for an IGCT-Based ZVS Resonant DC Transformer

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IGCTs have successfully demonstrated to be well-suited devices for an application in medium-voltage dc transformers based on LLC resonant converter topology. This application enables unusually high switching frequencies in kHz range thanks to the zero-volt ...

2022

Study of the enhanced electricity output of a sliding droplet-based triboelectric nanogenerator for droplet sensor design

Jürgen Brugger, Xia Liu, Wei Xu, Xiaopeng Li

Triboelectric nanogenerators are establishing themselves as promising candidates for realizing high-efficient energy harvesting from largely available droplets. However, the conventional droplet-based liquid-solid triboelectric nanogenerator (DLS-TENG) has ...

Elsevier2022

Electron Trap Dynamics in Polymer Light-Emitting Diodes

Frank Nüesch, Roland Hany, Michael Bauer, Wei-Hsu Hu, Matthias Diethelm

Semiconducting polymers are being studied intensively for optoelectronic device applications, including solution-processed light-emitting diodes (PLEDs). Charge traps in polymers limit the charge transport and thus the PLED efficiency. It is firmly establi ...

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On the Response Speed of Narrowband Organic Optical Upconversion Devices

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Organic upconversion devices (OUCs) consist of an organic infrared photodetector and an organic visible light-emitting diode (OLED), connected in series. OUCs convert photons from the infrared to the visible and are of use in applications such as process c ...

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Donor-Acceptor-Donor "Hot Exciton" Triads for High Reverse Intersystem Crossing in OLEDs

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Hot exciton materials have the potential to improve the quantum efficiency of organic light-emitting diodes (OLEDs) by promoting high reversed intersystem crossing (hRISC) between a high-lying triplet (T-n, n >= 2) and a radiative singlet (S-m). In recent ...

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Hard and Soft Switching Losses in Power Converters: Role of Transistor Output Capacitance

Palliyage Srilak Nirmana Perera

To best utilize power converters, a sound understanding of the relationship between the circuit topology and the power-semiconductor-device characteristics is required. This is especially important in high-frequency switching, where device parasitics start ...

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New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

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Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

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GaN vertical power devices on silicon substrates

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Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

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