Publication

Profile angle control in SIO2 deep anisotropic dry etching for MEMS fabrication

Philippe Renaud, Cyrille Hibert, Philippe Flückiger
2004
Conference Papers

Abstract

We report a recent breakthrough to control profile angle for SiO2 Deep Anisotropic Dry Etching (SDADE). Our study reveals that gas residence time is the key parameter to control profile angle. Moreover, we show that it is possible to control profile angle, SiO2 etch rate and SiO2 selectivity to Si mask independently. Finally, the optimized process has the following performances: angle profile: 89.8degrees, SiO2 etch rate: 500 nm / min, selectivity: 18:1.

Official source

https://infoscience.epfl.ch/entities/publication/152aaf84-f02c-49b2-8947-b9d74498c415

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Philippe Renaud, Cyrille Hibert, Philippe Flückiger
2004
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/152aaf84-f02c-49b2-8947-b9d74498c415

About this result

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