Publication

Piezoresistive n-Type 4H-SiC Pressure Sensor with Membrane Formed by Mechanical Milling

Nico de Rooij
2011
Conference Papers

Abstract

A 4H-SiC pressure sensor with piezoresistive transducers, for harsh environment applications, e.g., high temperature (~650°C) and/or in corrosive chemicals is presented. The sensing membrane, 1 mm in diameter and 50 µm in thickness, was formed by milling (drilling) a bulk single crystal SiC wafer. Both transverse and longitudinal piezoresistors were formed on the membrane out of an n-type SiC epitaxial layer. Ohmic contacts were obtained with Ta/Ni/Pt metallization followed by annealing at 1000°C for 20 min. The sensor was assembled on a small board and characterized under hydrostatic pressures up to 60 bar at room temperature. The obtained pressure sensitivity was 268 µV/V/bar. The sensor chip was exposed in air at 600°C for 165 hours and changes in bridge resistance were measured.

Official source

https://infoscience.epfl.ch/entities/publication/1476c399-c5be-44ce-acec-5c9e1d5f5d04

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Nico de Rooij
2011
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/1476c399-c5be-44ce-acec-5c9e1d5f5d04

About this result

Related concepts (32)

Contact resistance

The term contact resistance refers to the contribution to the total resistance of a system which can be attributed to the contacting interfaces of electrical leads and connections as opposed to the intrinsic resistance. This effect is described by the term electrical contact resistance (ECR) and arises as the result of the limited areas of true contact at an interface and the presence of resistive surface films or oxide layers. ECR may vary with time, most often decreasing, in a process known as resistance creep.

Field-effect transistor

The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.

Ohmic contact

An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I–V) curve as with Ohm's law. Low-resistance ohmic contacts are used to allow charge to flow easily in both directions between the two conductors, without blocking due to rectification or excess power dissipation due to voltage thresholds. By contrast, a junction or contact that does not demonstrate a linear I–V curve is called non-ohmic.

Related publications (5)

Piezoresistive n-Type 4H-SiC Pressure Sensor with Membrane Formed by Mechanical Milling

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