Assignment of Fermi-level pinning and optical transitions to the (As-Ga)(2)-O-As center in oxygen-doped GaAs

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Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Amirmohammad Miran Zadeh, Elison de Nazareth Matioli, Luca Nela, Catherine Erine

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

Electronic properties and ion migration of “in vacuo” lithiated nanoporous WO3:Mo thin films

Andreas Schueler, Josef Andreas Schuler, Luc Burnier, Jérémy Jacques Antonin Fleury

Electrochromic (EC) glazing helps manage daylight and solar heat gains in building, thereby allowing a reduction in energy consumption caused by heating, cooling, and artificial lighting. This study relates the optical and electronic properties of nanoporo ...

2022

Single molecule fluorescence and phosphorescence studies using a scanning tunneling microscope

Abhishek Grewal

This thesis investigates novel single-molecule luminescence phenomena at their inherent, sub-molecular length scale. The microscopic understanding of luminescence processes will be crucial for the continued improvement of organic optoelectronic and semicon ...

EPFL2022

Addressing shape and extent of Weyl cones in TaAs by Landau level spectroscopy

Ana Akrap

TaAs is a prime example of a topological semimetal with two types of Weyl nodes, W-1 and W-2, whose bulk signatures have proven elusive. We apply Landau level spectroscopy to crystals with multiple facets and identify-among other low-energy excitations bet ...

AMER PHYSICAL SOC2022

In situ work function measurements of W, WO3 nanostructured surfaces

Francisco Sanchez

Surface nanostructuring enables the fabrication of materials with highly desirable properties. Nanostructured tungsten surfaces have potential applications in solar water splitting. Exposing a polished tungsten surface to helium plasma induces various surf ...

ELSEVIER SCIENCE SA2022

Electronic transport in graphene nanoribbon junctions

Kristians Cernevics

Graphene nanoribbons (GNRs) - one-dimensional strips of graphene - share many of the exciting properties of graphene, such as ballistic transport over micron dimensions, strength and flexibility, but more importantly, they exhibit a tunable band gap that d ...

EPFL2022

Spectral properties of extended systems from Koopmans-compliant functionals

Riccardo De Gennaro

Electronic-structure simulations have been impacting the study of materials properties thanks to the simplicity of density-functional theory, a method that gives access to the ground state of the system. Although very important, ground-state properties rep ...

EPFL2022

Koopmans Spectral Functionals in Periodic Boundary Conditions

Nicola Marzari, Nicola Colonna, Edward Baxter Linscott, Riccardo De Gennaro

Koopmans spectral functionals aim to describe simultaneously ground-state properties and charged excitations of atoms, molecules, nanostructures, and periodic crystals. This is achieved by augmenting standard density functionals with simple but physically ...

AMER CHEMICAL SOC2022

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Minghua Zhu

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

Extremely large magnetoresistance in the "ordinary" metal ReO3

Oleg Yazyev, Quansheng Wu, Shengnan Zhang

The extremely large magnetoresistance (XMR) observed in many topologically nontrivial and trivial semimetals has attracted much attention in relation to its underlying physical mechanism. In this paper, by combining the band structure and Fermi surface (FS ...

AMER PHYSICAL SOC2021

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021