Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices

In this work a non-local band-to-band tunnelling model has been successfully implemented into a fullband Monte Carlo simulator and applied to Tunnel-FET devices. No stability or statistical noise problems were encountered in spite of particle weights ranging over many orders of magnitude (due to vastly different generation rates at different positions inside the device and biases) so that Tunnel-FET I-V curves could be traced over the whole on-off range. Different approaches for the choice of the tunnelling path have been compared and relevant differences are observed in both the current levels and the spatial distribution of the generated carriers. (C) 2011 Elsevier Ltd. All rights reserved.

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices

Chat with Graph Search

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials