Light-induced renormalization of the band structure of chiral tellurium

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Achieving a low contact resistance has been an important issue in the design of two-dimensional (2D) semiconductor-metal interfaces. The metal contact resistance is dominated by interfacial interactions. Here, we systematically investigate 2D semiconductor ...

The subject of the present work is discovery and in-depth characterization of a new class of functional materials. Tuning of the bond polarity and orbital occupation with a goal of establishing balance between localization and delocalization of electrons - ...

The surface erosion of biased electrodes immersed in a radio frequency (RF) plasma was investigated in oblique magnetic fields ranging from 0.1 T to 3.5 T. The plasma potential and density in the vicinity of the biased electrode have been measured using an ...

Three-dimensional topological semimetals have emerged as strong candidates to probe new fundamental physical phenomena that could be exploited to develop next generation electronics. However, many aspects of their electronic properties remain unclear. Thi ...

An extensive understanding of WO3 and WSe2 bulk crystalline structures and explicit solvent effects on (001)-WO3 and (100)-WSe2 facets are essential for design of efficient (photo) electrocatalysts. The atomistic level understanding of both WO(3 )and WSe2 ...

An ab initio density functional theory study on the candidacy of single-walled black phosphorus nanotubes (BPNTs) towards sensing several common toxic gas molecules (NH3, CO, NO, NO2, and SO2) was conducted. Various adsorption characteristics, including th ...

Band Structure Determination In article number 2105426, Mirjana Dimitrievska, Anna Fontcuberta i Morral, and co-workers demonstrate how nanowires can be effectively used for direct determination of the band structure by means of valence electron energy-los ...

The tin oxide buffer layer between the transparent conducting oxide current collector and the hematite photoelectrode causes considerable water oxidation enhancement of that electrode. The water oxidation onset potential is lowered by 180 mV. The lifetime ...

The influence of charge trap states in the dielectric boundary material on capacitively coupled radio-frequency (RF) plasma discharge is investigated with theory and particle-in-cell/Monte Carlo collision simulation. It is found that the trap states of the ...

Trigonal tellurium, a small-gap semiconductor with pronounced magneto-electric and magneto-optical responses, is among the simplest realizations of a chiral crystal. We have studied by spin- and angle-resolved photoelectron spectroscopy its unconventional ...

Contradictory theoretical results for oxygen vacancies in SrTiO3 (STO) were often related to the peculiar properties of STO, which is a d(0) transition metal oxide with mixed ionic-covalent bonding. Here, we apply, for the first time, density functional th ...

Parity-time symmetry plays an essential role for the formation of Dirac states in Dirac semimetals. So far, all of the experimentally identified topologically nontrivial Dirac semimetals (DSMs) possess both parity and time reversal symmetry. The realizatio ...

By combining experiments and first-principles calculations, Y-doped Sb7Se3 thin films were successfully fabricated and investigated. Our results suggest that Y is one promising dopant for simultaneously enhancing thermal stability, increasing phase change ...

Two-dimensional (2D) materials, in particular graphene and transition metal dichalcogenides (TMDC), have attracted great scientific interest over the last decade, revealing exceptional mechanical, electrical and optical properties. Owing to their layered n ...

We describe a nonempirical procedure for achieving accurate band gaps of extended systems through the insertion of suitably defined potential probes. By enforcing Koopmans' condition on the resulting localized electronic states, we determine the optimal fr ...

Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previously sho ...

Light-induced renormalization of the band structure of chiral tellurium

Chat with Graph Search

Investigation of Interface Interactions Between Monolayer MoS2 and Metals: Implications on Strain and Surface Roughness

Murunskite - a new class of functional material

Plasma sputtering of biased electrodes in an oblique magnetic field

Strain Gradients and Magnetoresistance in Microstructured 3D Topological Semi-metals

Effects of surface wettability on (001)-WO3 and (100)-WSe2: A spin-polarized DFT-MD study

Single-Walled Black Phosphorus Nanotube as a NO(2 )Gas Sensor

The Advantage of Nanowire Configuration in Band Structure Determination (Adv. Funct. Mater. 41/2021)

Function and Electronic Structure of the SnO2 Buffer Layer between the alpha-Fe2O3 Water Oxidation Photoelectrode and the Transparent Conducting Oxide Current Collector

Unveiling the role of dielectric trap states on capacitively coupled radio-frequency plasma discharge: dynamic charging behaviors

Radial Spin Texture of the Weyl Fermions in Chiral Tellurium

Self-consistent DFT

Emergence of Nontrivial Low-Energy Dirac Fermions in Antiferromagnetic EuCd2As2

Improved thermal stability and fast phase change speed of Y-doped Sb7Se3 thin film for phase change memory applications

Spin-valley optoelectronics based on two-dimensional materials

Adjustable potential probes for band-gap predictions of extended systems through nonempirical hybrid functionals

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes