Publication

Ar+ Bombardment of Si(100) in Oxygen Atmosphere - Room-Temperature Oxide Formation Studied by X-Ray Photoelectron-Spectroscopy

Giorgio Margaritondo
1995
Journal Articles

Abstract

We report the formation of silicon oxide thin films at room temperature obtained by Ar+ ion bombardment of Si(100) wafers in partial oxygen atmosphere. Samples have been prepared at several ion beam energies (0 less than or equal to E(b) less than or equal to 400 eV) and characterized by x-ray photoelectron spectroscopy. The oxidation rate, as well as the SiO2/SiOx (x = 0.5, x = 1, and x = 1.5) ratio, have been found to increase with the ion beam energy. For the highest energy bombardment, E(b) = 400 eV, we observed the formation of a uniform, electrically insulating, SiO2 top layer about 37 Angstrom thick. (C) 1995 American Institute of Physics.

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https://infoscience.epfl.ch/entities/publication/0eccdfd5-3fd5-4ca9-a63a-87bfd9c8f452

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Giorgio Margaritondo
1995
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/0eccdfd5-3fd5-4ca9-a63a-87bfd9c8f452

About this result

Related concepts (32)

X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy (XPS) is a surface-sensitive quantitative spectroscopic technique based on the photoelectric effect that can identify the elements that exist within a material (elemental composition) or are covering its surface, as well as their chemical state, and the overall electronic structure and density of the electronic states in the material. XPS is a powerful measurement technique because it not only shows what elements are present, but also what other elements they are bonded to.

Photoemission spectroscopy

Photoemission spectroscopy (PES), also known as photoelectron spectroscopy, refers to energy measurement of electrons emitted from solids, gases or liquids by the photoelectric effect, in order to determine the binding energies of electrons in the substance. The term refers to various techniques, depending on whether the ionization energy is provided by X-ray, XUV or UV photons. Regardless of the incident photon beam, however, all photoelectron spectroscopy revolves around the general theme of surface analysis by measuring the ejected electrons.

Auger electron spectroscopy

Auger electron spectroscopy (AES; pronounced oʒe in French) is a common analytical technique used specifically in the study of surfaces and, more generally, in the area of materials science. It is a form of electron spectroscopy that relies on the Auger effect, based on the analysis of energetic electrons emitted from an excited atom after a series of internal relaxation events. The Auger effect was discovered independently by both Lise Meitner and Pierre Auger in the 1920s.

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Ar+ Bombardment of Si(100) in Oxygen Atmosphere - Room-Temperature Oxide Formation Studied by X-Ray Photoelectron-Spectroscopy

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