High Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELs

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The pedestal structure, edge transport and linear MHD stability have been analyzed in a series of JET with the ITER-like wall hydrogen (H) and deuterium (D) type I ELMy H-mode plasmas. The pedestal pressure is typically higher in D than in H at the same in ...

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

Gallium nitride (GaN) power devices are employed in an increasing number of applications thanks to their excellent performance. Nevertheless, their potential for cryogenic applications, such as space, aviation, and superconducting systems, has not yet been ...

The difficulty in accurately measuring losses in high-frequency power converters hinders accurate breakdown of losses which is essential for device and circuit optimization. Electrical methods are often not adequate and calorimetric approaches found in the ...

Low ON-resistance of advanced superjunction (SJ) and GaN-on-Si transistors is of great importance in power converters, however, the anomalous loss in their output capacitance (C OSS ) severely limits their performance. In this work, we use an energy-orient ...

With a large deployment of power electronic converters in various critical applications, condition health monitoring is increasingly becoming important. In modular multilevel converter, submodule capacitance represents one of the critical components, havin ...

With the advent of intelligent sensor nodes in everyday life, low power aspects of system design become more and more important. Adaptive body biasing is a promising methodology to achieve dynamic adaptation of the tradeoff between performance and energy b ...

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...

For certain field-effect transistors (FETs) in soft-switching operation, the large-signal behavior of their output capacitance ( Co ) has shown to deviate considerably from the datasheet values. This can have a significant effect on hard-switching losses i ...

Dielectric elastomer actuators (DEAs) have extremely advantageous characteristics such as lightness, compactness, flexibility, and large displacements. However, in order to operate, they can require voltages in the order of several thousands of volts. Thus ...

High Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELs

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Isotope dependence of the type I ELMy H-mode pedestal in JET-ILW hydrogen and deuterium plasmas

GaN-based power devices: Physics, reliability, and perspectives

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Microchannel-based Calorimeter for Rapid and Accurate Loss Measurements on High-efficiency Power Converters

Investigation on Output Capacitance Losses in Superjunction and GaN-on-Si Power Transistors

Condition Health Monitoring of Modular Multilevel Converter Submodule Capacitors

Adaptive Body Biasing in Strong Body Factor Technologies

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Diamond on GaN integration for power semiconductor devices with efficient thermal management

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

Ultra-High-Voltage (7-kV) Bidirectional Flyback Converter Used to Drive Capacitive Actuators