Publication

High Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELs

Elyahou Kapon, Vladimir Iakovlev, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Grigore Suruceanu
2009
Conference Papers

Abstract

InAlGaAs/AlGaAs-based wafer-fused long-wavelength VCSELs with tunnel junction injection emitting in the 1310 nm and 1550 nm bands show high single-mode output and high speed modulation capabilities of 10 Gbps. Fundamental emission close to 6 mW at room temperature and 2.5 mW at 80 degrees C for both 1310 nm and 1550 nm devices is demonstrated for the first time. (C)2008 Optical Society of America

Official source

https://infoscience.epfl.ch/entities/publication/0b15d5f1-401a-43c4-9ae4-2677fa320e43

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High Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELs

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