Publication

Semiconductor-on-Metal Schottky Barriers - Ge on Ni and Ag

Giorgio Margaritondo
1991
Journal Articles

Abstract

We explore the formation of Schottky barriers by adsorption of Ge overlayers onto single crystal Ni and Ag substrates. The results are compared to earlier results from Si-on-metal systems as well as interfaces formed by the metal-on-semiconductor deposition sequence. We find that Ge overlayers on Ag form extended interfaces with the creation of an intermediate metallic phase - whereas Ag on Ge forms abrupt interfaces. However, the Ge on Ni interface is found to be abrupt. For the resultant p-type Schottky barrier heights we report values of 0.18 eV for Ge/Ag(111) and Ge/Ag(100) - in agreement with the Ag-on-Ge value - and of 0.17 eV for Ge/Ni(111). The pinning strength parameter derived from our data is S = 0.11 eV, in agreement with the value for metal-on-Ge interfaces.

Official source

https://infoscience.epfl.ch/entities/publication/0aed36ae-aaa0-4a96-9162-4906821bf967

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Giorgio Margaritondo
1991
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/0aed36ae-aaa0-4a96-9162-4906821bf967

About this result

Related concepts (32)

Metal–semiconductor junction

In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.

Zintl phase

In chemistry, a Zintl phase is a product of a reaction between a group 1 (alkali metal) or group 2 (alkaline earth metal) and main group metal or metalloid (from groups 13, 14, 15, or 16). It is characterized by intermediate metallic/ionic bonding. Zintl phases are a subgroup of brittle, high-melting intermetallic compounds that are diamagnetic or exhibit temperature-independent paramagnetism and are poor conductors or semiconductors. This type of solid is named after German chemist Eduard Zintl who investigated them in the 1930s.

Schottky diode

The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes. When sufficient forward voltage is applied, a current flows in the forward direction.

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Semiconductor-on-Metal Schottky Barriers - Ge on Ni and Ag

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