GaAs nanoscale membranes: prospects for seamless integration of III-Vs on silicon

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Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

GaN-based devices are ubiquitous in everyday life, ranging from InGaN/GaN light-emitting diodes (LEDs) for illumination to AlGaN/GaN high-electron-mobility transistors for compact power supplies. Nevertheless, despite the tremendous development in the past ...

This thesis investigates novel single-molecule luminescence phenomena at their inherent, sub-molecular length scale. The microscopic understanding of luminescence processes will be crucial for the continued improvement of organic optoelectronic and semicon ...

The Industrial Internet of Things (IIoT) is reshaping manufacturing, industrial processes, and infrastructure management. By fostering new levels of automation, efficiency, and predictive maintenance, IIoT is transforming traditional industries into intell ...

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

Low photon extraction efficiency limits the optical spin readout fidelity in emerging quantum sensing technologies in diamond. Here, we propose and fabricate integrated diamond nanoprobes based on cavity-enhanced IR absorption of embedded Nitrogen Vacancy ...

Two-dimensional (2D) materials are atomically thin crystals with exceptional mechanical, electrical and optical properties. Their unique characteristics originating from quantum confinement in the vertical dimension have attracted a strong interest for sci ...

This research presents a comprehensive comparative analysis of the passivation kinetics of OFP-Cu and OF-Cu in simulated repository electrolyte. The study employs a range of techniques, including potentiodynamic polarization, multi-step potentiostatic pola ...

The utilization of MHPs in optoelectronics has surged over the past decade due to their favorable properties such as direct band gaps, a large JDOS near the band edge resulting in strong optical absorption, and high defect tolerance allowing operation clos ...

Along with recent advancements in thin-film technologies, the engineering of complex transition metal oxide heterostructures offers the possibility of creating novel and tunable multifunctionalities. A representative complex oxide is the perovskite stronti ...

As the demand for photovoltaic technologies continues to grow, the quest for efficient and sustainable transparent conducting electrodes (TCEs) rapidly rises. Traditional solutions, such as indium tin oxide (ITO), face challenges related to indium scarcity ...

Metal–oxide–semiconductor junctions are the building blocks of modern electronics and can provide a variety of functionalities, from memory to computing. The technology, however, faces constraints in terms of further miniaturization and compatibility with ...

Recently, hexagonal boron nitride (hBN) has become an interesting platform for quantum optics due to its peculiar defect-related luminescence properties. Concomitantly, hBN was established as the ideal insulating support for realizing 2D materials devices, ...

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

Over the past decade, quantum photonics platforms aiming at harnessing the fundamental properties of single particles, such as quantum superposition and quantum entanglement, have flourished. In this context, single-photon emitters capable of operating at ...

Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

LaFeO3 (LFO) is recognized as a candidate material for solar water oxidation, but its photoelectrochemical response remains modest and stagnant. With the aim of advancing LFO photoanodes for the oxygen evolution reaction (OER), here, a nanorod array-type e ...

Hole-transporting material (HTMs) are crucial for obtaining the stability and high efficiency of perovskite solar cells (PSCs). However, the current state-of-the-art n-i-p PSCs relied on the use of 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spiro ...

PUS3 encodes the pseudouridylate synthase 3, an enzyme catalyzing the formation of tRNA pseudouridine, which plays a critical role in tRNA structure, function, and stability. Biallelic pathogenic variants of PUS3 have been previously associated with severe ...

GaAs nanoscale membranes: prospects for seamless integration of III-Vs on silicon

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Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Direct high-temperature MOCVD growth of GaN on foreign substrates

Single molecule fluorescence and phosphorescence studies using a scanning tunneling microscope

Physics-Enhanced Graph Neural Networks for Soft Sensing in Industrial Internet of Things

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Fiber-Coupled Absorption-based Quantum Sensing with Nitrogen Vacancy Ensembles in a Suspended Diamond Photonic Cavity

Optoelectronics based on the spin-valley physics of 2D materials

Theoretical explanation of passivation behavior in OFP-Cu and OF-Cu

Advanced Modeling and Simulation of Luminescence Phenomena in Perovskite Semiconductors

Defect-induced magnetism in homoepitaxial SrTiO3

Integration of Metal Meshes as Transparent Conducting Electrodes into Perovskite Solar Cells

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

Light emission properties of mechanical exfoliation induced extended defects in hexagonal boron nitride flakes

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots

Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Defect engineered nanostructured LaFeO3 photoanodes for improved activity in solar water oxidation

Quasi-Planar Core Based Spiro-Type Hole-Transporting Material for Dopant-Free Perovskite Solar Cells

PUS3-related disorder: Report of a novel patient and delineation of the phenotypic spectrum