Publication

Low-Noise Microwave Performance of 0.1 mu m Gate AlInN/GaN HEMTs on SiC

Nicolas Grandjean, Jean-François Carlin, Eric Pascal Feltin
2010
Journal Articles

Abstract

We report the first microwave noise characterization of AlInN/GaN HEMTs. Transistors with a 0.1 mu m gate implemented on a semi-insulating SiC substrate achieve a maximum current density of 1.92 A/mm at V-GS = 0 V, a measured transconductance g(M) = 480 mS/mm, and a peak current gain cutoff frequency f(T) = 121 GHz with a simultaneous maximum oscillation frequency f(MAX) = 142 GHz. At 10 (20) GHz, our HEMTs exhibit a minimum noise figure F-min of 0.62 (1.5) dB together with a high associated gain G(A) of 15.4 (13.3) dB. The F-min values are among the lowest reported in nitride HEMTs, and the G(A) values are the best so far found in the literature, demonstrating the excellent potential of AlInN/GaN HEMTs for low-noise microwave applications.

Official source

https://infoscience.epfl.ch/entities/publication/0865dcfa-1155-4f65-9f15-32d8aeea88ba

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Nicolas Grandjean, Jean-François Carlin, Eric Pascal Feltin
2010
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/0865dcfa-1155-4f65-9f15-32d8aeea88ba

About this result

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