Publication

Quantifying carbon site switching dynamics in GaN by electron holography

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté
2025

Abstract

Off-axis electron holography is utilized to identify point defect reactions and quantify their dynamics by probing the time and temperature dependence of the Fermi level upon annealing. The methodology is illustrated using implanted carbon (C) in GaN, where a site switching phenomenon of C, from substitutional to interstitial, is found to be responsible for lifting the Fermi-level pinning in the lower part of the band gap. The carbon site switching process has an activation barrier energy of 2.27±0.26eV.

Official source

https://infoscience.epfl.ch/entities/publication/083d99c0-9597-42b2-bfbf-8db49529784f

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Nicolas Grandjean, Jean-François Carlin, Raphaël Butté
2025

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/083d99c0-9597-42b2-bfbf-8db49529784f

About this result

Related concepts (28)

Fermi level

The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. It is a thermodynamic quantity usually denoted by μ or EF for brevity. The Fermi level does not include the work required to remove the electron from wherever it came from. A precise understanding of the Fermi level—how it relates to electronic band structure in determining electronic properties; how it relates to the voltage and flow of charge in an electronic circuit—is essential to an understanding of solid-state physics.

Fermi energy

The Fermi energy is a concept in quantum mechanics usually referring to the energy difference between the highest and lowest occupied single-particle states in a quantum system of non-interacting fermions at absolute zero temperature. In a Fermi gas, the lowest occupied state is taken to have zero kinetic energy, whereas in a metal, the lowest occupied state is typically taken to mean the bottom of the conduction band. The term "Fermi energy" is often used to refer to a different yet closely related concept, the Fermi level (also called electrochemical potential).

Metal–semiconductor junction

In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.

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Quantifying carbon site switching dynamics in GaN by electron holography

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