Subpicosecond thermalization of carriers in polar GaN/AlN quantum dots

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The formation mechanisms, structure and optoelectronic properties of Ga(In)As/(Al)GaAs quantum dot (QD) heterostructures grown by organometallic chemical vapor deposition on patterned (111)B GaAs substrates are reviewed. With this approach, it is possible to prepare high-quality semiconductor QDs whose position on a substrate is precisely controlled via a pre-growth photolithography step. The dots are formed at the center of an inverted, tetrahedral pyramid and are surrounded by distinct, low-dimensional ba

We develop a dynamical theory for the optical injection of charge and spin current originating from the interferences between two coherent laser pulses of frequencies omega and 2omega. Multiband Bloch equations which include one- and two-photon interband transitions are derived. They also account for ac Stark shifts and intersubband two-photon transitions. The model is used to describe the case of time-dependent charge and spin current injection in a symmetric GaAs/AlGaAs quantum well. A comparison to the b

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Subpicosecond thermalization of carriers in polar GaN/AlN quantum dots

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