Publications related to Biomarkers in Interstitial Fluid: From Screening to Sensor Development

Related publications (24)

Nano-MOSFET - Foundation of Quantum Computing Part I

As big strides were being made in many science fields in the 1970s and 80s, faster computation for solving problems in molecular biology, semiconductor technology, aeronautics, particle physics, etc., was at the forefront of research. Parallel and super-co ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

Chengmin Li

In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

Ieee-Inst Electrical Electronics Engineers Inc2023

China lung cancer screening (CLUS) version 2.0 with new techniques implemented: Artificial intelligence, circulating molecular biomarkers and autofluorescence bronchoscopy

Jiancheng Yang

Objective: The present study, CLUS version 2.0, was conducted to evaluate the performance of new techniques in improving the implementation of lung cancer screening and to validate the efficacy of LDCT in reducing lung cancer-specific mortality in a high-r ...

ELSEVIER IRELAND LTD2023

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Luca Nela, Taifang Wang

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

Solid-State Technology for Shipboard DC Power Distribution Networks

Drazen Dujic, Seongil Kim, Gabriele Ulissi

The use of DC shipboard power distribution networks has been shown to offer several advantages over their AC counterparts. The reduction of the size and number of system components, the increased simplicity of operation and fuel efficiency of the system an ...

2021

Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors

Thomas Schmaltz

Semiconducting self-assembled monolayers (SAMs) represent highly relevant components for the fabrication of organic thin-film electronics because they enable the precise formation of active it-conjugates in terms of orientation and layer thickness. In this ...

AMER CHEMICAL SOC2021

A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

Jean-Michel Sallese, Arnout Lodewijk M Beckers, Farzan Jazaeri, Seyed Armin Tajalli

Quantum computing (QC) has already entered the industrial landscape and several multinational corporations have initiated their own research efforts. So far, many of these efforts have been focusing on superconducting qubits, whose industrial progress is c ...

IEEE2019

Reduction of Fermi level pinning at Cu-BP interfaces by atomic passivation

Xiao Zhou

Black phosphorus (BP) is a semiconducting material with a direct finite band gap in its monolayer, attracting intense attention for its application in field-effect transistors. However, strong Fermi level pinning (FLP) has been observed for contacts betwee ...

2019

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

Institute of Electrical and Electronics Engineers2019

Benefits and Challenges of Designing Cryogenic CMOS RF Circuits for Quantum Computers

Edoardo Charbon

Accurate and low-noise generation and amplification of microwave signals are required for the manipulation and readout of quantum bits (qubits). A fault-tolerant quantum computer operates at deep cryogenic temperatures (i.e.,

IEEE2019

Characterization and Modeling of 28 nm Bulk CMOS Technology down to Cryogenic Temperatures (4.2 K)

Christian Enz, Arnout Lodewijk M Beckers, Farzan Jazaeri

This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300, ...

2018

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Mihai Adrian Ionescu, Igor Stolichnov, Enrico Colla, Matteo Cavalieri

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

2018

Field-induced charge separation dynamics in monolayer MoS2

Andras Kis, Dumitru Dumcenco, Dmitry Ovchinnikov, Yen-Cheng Kung

The absorption spectra of 2D semiconductors are dominated by excitons with binding energy of several hundreds of meV. Nevertheless, even single layers show an appreciable photovoltaic effect and work as the active material in high sensitivity photodetector ...

Iop Publishing Ltd2017

Reconfigurable electronics based on metal-insulator transition : steep-slope switches and high frequency functions enabled by Vanadium Dioxide

Wolfgang Amadeus Vitale

The vast majority of disruptive innovations in science and technology has been originated from the discovery of a new material or the way its properties have been exploited to create novel devices and systems. New advanced nanomaterials will have a lasting ...

EPFL2016

A Novel FPGA Architecture based on Ultra-Fine Grain Reconfigurable Logic Cells

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Gain Kim

In this paper, we investigate the opportunity brought by controllable-polarity transistors to design efficient reconfigurable circuits. Controllable-polarity transistors are devices whose polarity can be electrostatically programmed to be either n- or p-ty ...

Institute of Electrical and Electronics Engineers2015

An Open-Source Multiscale Framework for the Simulation of Nanoscale Devices

Nicola Marzari

We present a general simulation framework for assessing the performance of nanoscale devices that combines several powerful and widely used open-source codes, and based on minimal but chemically accurate tight-binding Hamiltonians obtained from density-fun ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Contacts and Environmental Effects in Two-Dimensional MoS2 Field-Effect Transistors

Dominik Sebastian Lembke

Two-dimensional (2D) semiconductors such as single- and few-layer molybdenum disulphide(MoS2) are promising building blocks for prospect flexible, transparent and low power electronics. Due to an electronic bandgap of the order of ~1.8 eV and atomic-scale ...

EPFL2014

Top-Down Fabrication of Gate-All-Around Vertically-Stacked Silicon Nanowire FETs with Controllable Polarity

Giovanni De Micheli, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Jian Zhang, Michele De Marchi

Asthe currentMOSFET scaling trend is facing strong limitations, technologies exploiting novel degrees of freedom at physical and architecture level are promising candidates to enable the continuation of Moore's predictions. In this paper, we report on the ...

Institute of Electrical and Electronics Engineers2014

Design Methodologies and CAD for Emerging Nanotechnologies

Shashi Kanth Bobba

With technology scaling reaching the fundamental limits of Si-CMOS in the near future, the semiconductor industry is in quest for innovation from various disciplines of integrated circuit (IC) design. At a fundamental level, technology forms the main drive ...

EPFL2013

The Effect of Interface Modification on the Properties of Organic Thin-Film Transistors

Franziska Dora Fleischli

In organic thin-film transistors (OTFTs), the conducting channel is located near the interface between the organic semiconductor and the dielectric; this interface is crucial for transistor performance. The goal of this thesis is to study the effect of thi ...

EPFL2010