Publication

Band alignments and defect levels in Si-HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

Alfredo Pasquarello
2008
Journal Articles

Abstract

The determination of band alignments and defect levels is demonstrated for the technologically relevant Si-SiO2-HfO2 gate stack. The proposed scheme, which combines first-principles molecular dynamics for model generation and hybrid density functionals for electronic-structure calculations, yields band offsets in close agreement with experiment. Charge transition and pinning levels associated with oxygen vacancies are aligned with respect to the silicon band edges. The vacancies are shown to preferentially reside in the amorphous transition layer, consistent with experimental observations of Fermi-level pinning.

Official source

https://infoscience.epfl.ch/entities/publication/040814e5-3e40-4a25-bc43-524700abc16d

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Alfredo Pasquarello
2008
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/040814e5-3e40-4a25-bc43-524700abc16d

About this result

Related concepts (24)

Fermi level

The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. It is a thermodynamic quantity usually denoted by μ or EF for brevity. The Fermi level does not include the work required to remove the electron from wherever it came from. A precise understanding of the Fermi level—how it relates to electronic band structure in determining electronic properties; how it relates to the voltage and flow of charge in an electronic circuit—is essential to an understanding of solid-state physics.

Metal–semiconductor junction

In solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.

Electronic band structure

In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called band gaps or forbidden bands). Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large, periodic lattice of atoms or molecules.

Related publications (20)

Band alignments and defect levels in Si-HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

Chat with Graph Search

Enhanced breakdown performance on GaN vertical diodes through intrinsic polarization fields and extrinsic p-oxides

Lattice dynamics and structural phase stability of group-IV elemental solids with the r2SCAN functional

Polarization Enhanced GaN SBDs with p-NiO/LiNiO Junction Termination Extensions Achieving 1 kV Breakdown Voltage