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Won Yong Ha

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Related publications (4)

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A Back-Illuminated SPAD Fabricated With 40 nm CMOS Image Sensor Technology Achieving Near 40% PDP at 940 nm

Won Yong Ha

This article introduces a back-illuminated (BI) single-photon avalanche diode (SPAD) based on 40 nm CMOS image sensor (CIS) technology which is the most advanced technology node for the fabrication of a SPAD up to date. It's based on a P-well (PW) and deep ...

Ieee-Inst Electrical Electronics Engineers Inc2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Developing photodetectors for future RICH particle detector applications

Prabhleen Singh, Edoardo Charbon, Claudio Bruschini, Ming-Lo Wu, Utku Karaca, Won Yong Ha, Gregor Gibson Taylor

The proposed next generation of particle physics experiments utilizing ring imaging Cherenkov detectors (RICH) will require photodetectors with 100 ps timing, mm2 granularity, large active area and the ability to operate in increasingly harsh environments. ...

SPIE2025

Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltage

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee, Won Yong Ha

This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOSDMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well availab ...

Optica Publishing Group2023