Publications by Hongkeng Zhu | EPFL Graph Search

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Valorizing CO2 into chemical building blocks via efficient electrified processes could significantly decrease carbon emissions. In this work, a device that allows generation of tunable micro‐plasma modes (arc, pulsed, pulsed arc) on a chip for efficient, l ...

In this paper, we review some of the main methods to characterize on-state and off-state losses in wide-band-gap devices under switching conditions. In the off-state, we will discuss about losses related to charging and discharging the output capacitance i ...

Dynamic ON-resistance (RON) in GaN HEMTs is a critical issue for power electronics efficiency. This paper proposes a novel method to measure dynamic (RON) under long-term OFF-state drain-stress and steady-state soft-switching, comparing Schottky-type (GaN- ...

Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dynamic R ...

The lateral structure of gallium nitride (GaN) semiconductors enables monolithic integration of logic and power devices, which offers promise to miniaturize bulky converters into a compact package. However, the concentrated heat that arises from this dense ...

The inherent dissipated energy losses (Ediss) during the charging-discharging cycle of output capacitance (CO) in gallium nitride high-electron-mobility transistors (GaN HEMTs) limit their efficiency in soft-switching applications. Accurate characterizatio ...

This paper discusses different measurement methods to evaluate the efficiency of WBG-based power supply solutions, including electrical measurement methods and their verification with calorimetric methods, and compares the performance of Si-based and GaN-b ...

Hongkeng Zhu

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Low‐Power Tunable Micro‐Plasma Device for Efficient and Scalable CO2 Valorization

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

Investigation of Dynamic RON in p-GaN Gate HEMTs under Steady-State Soft-Switching: Roles of OFF-State Trapping and Hole Injections

Accurate Measurement of Dynamic ON-Resistance in GaN Transistors at Steady-State

In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l

Soft-Switching CO Hysteresis Losses in GaN HEMTs: A Resonant-Sawyer-Tower Measurement Method

Measurement of WBG-based power supplies