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Thomas Fjord Kjaersgaard Weatherley

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Related publications (4)

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The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Thomas Fjord Kjaersgaard Weatherley

Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...

EPFL2023

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Matthieu Jean-Marie Louis Aucouturier, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yixing Chen, Gwénolé Jean Jacopin, Camille Haller, Wei Liu, Thomas Fjord Kjaersgaard Weatherley

We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the SQW is controlled by tuning ...

AMER INST PHYSICS2020

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities

Davide Maria Di Paola, Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Duncan Thomas Lindsay Alexander, Danxuan Chen, Thomas Fjord Kjaersgaard Weatherley, Pierre Christophe Lottigier

In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (

MDPI2023

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Duncan Thomas Lindsay Alexander, Wei Liu, Wei Liu, Thomas Fjord Kjaersgaard Weatherley

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QW ...

AMER CHEMICAL SOC2021